scholarly journals Effect of incident angle on ultrasonic transmission in steam flow for use with clamp-on ultrasonic flowmeter

2020 ◽  
Vol 7 (4) ◽  
pp. 20-00131-20-00131
Author(s):  
Hideki MURAKAWA ◽  
Shuhei ICHIMURA ◽  
Masaki SHIMADA ◽  
Katsumi SUGIMOTO ◽  
Hitoshi ASANO ◽  
...  
2019 ◽  
Vol 2019 (0) ◽  
pp. OS11-02
Author(s):  
Shuhei ICHIMURA ◽  
Hideki MURAKAWA ◽  
Katsumi SUGIMOTO ◽  
Shuichi UMEZAWA ◽  
Katsuhiko SUGITA

Author(s):  
Hideki MURAKAWA ◽  
Shuhei ICHIMURA ◽  
Masaki SHIMADA ◽  
Katsumi SUGIMOTO ◽  
Shuichi UMEZAWA ◽  
...  

Author(s):  
Hideki Murakawa ◽  
Shuhei Ichimura ◽  
Katsumi Sugimoto ◽  
Hitoshi Asano ◽  
Shuichi Umezawa ◽  
...  

2020 ◽  
Vol 2020 (0) ◽  
pp. OS14-01
Author(s):  
Hideki MURAKAWA ◽  
Katsumi SUGIMOTO ◽  
Syuichi UMEZAWA ◽  
Masayuki IBI ◽  
Hirotoshi TAIRA ◽  
...  

2018 ◽  
Vol 2018 (0) ◽  
pp. OS4-8
Author(s):  
Shuhei ICHIMURA ◽  
Hideki MURAKAWA ◽  
Katsumi SUGIMOTO ◽  
Hitoshi ASANO ◽  
Shuichi UMEZAWA ◽  
...  

Author(s):  
S. Kimoto ◽  
H. Hashimoto ◽  
S. Takashima ◽  
R. M. Stern ◽  
T. Ichinokawa

The most well known application of the scanning microscope to the crystals is known as Coates pattern. The contrast of this image depends on the variation of the incident angle of the beam to the crystal surface. The defect in the crystal surface causes to make contrast in normal scanning image with constant incident angle. The intensity variation of the backscattered electrons in the scanning microscopy was calculated for the defect in the crystals by Clarke and Howie. Clarke also observed the defect using a scanning microscope.This paper reports the observation of lattice defects appears in thin crystals through backscattered, secondary and transmitted electron image. As a backscattered electron detector, a p-n junction detector of 0.9 π solid angle has been prepared for JSM-50A. The gain of the detector itself is 1.2 x 104 at 50 kV and the gain of additional AC amplifier using band width 100 Hz ∼ 10 kHz is 106.


Author(s):  
Scott Lordi

Vicinal Si (001) surfaces are interesting because they are good substrates for the growth of III-V semiconductors. Spots in RHEED patterns from vicinal surfaces are split due to scattering from ordered step arrays and this splitting can be used to determine the misorientation angle, using kinematic arguments. Kinematic theory is generally regarded to be inadequate for the calculation of RHEED intensities; however, only a few dynamical RHEED simulations have been attempted for vicinal surfaces. The multislice formulation of Cowley and Moodie with a recently developed edge patching method was used to calculate RHEED patterns from vicinal Si (001) surfaces. The calculated patterns are qualitatively similar to published experimental results and the positions of the split spots quantitatively agree with kinematic calculations.RHEED patterns were calculated for unreconstructed (bulk terminated) Si (001) surfaces misoriented towards [110] ,with an energy of 15 keV, at an incident angle of 36.63 mrad ([004] bragg condition), and a beam azimuth of [110] (perpendicular to the step edges) and the incident beam pointed down the step staircase.


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