Extraordinary refractive-index increase in lithium niobate caused by low-dose ion implantation

2001 ◽  
Vol 40 (22) ◽  
pp. 3759 ◽  
Author(s):  
Hui Hu ◽  
Fei Lu ◽  
Feng Chen ◽  
Bo-Rong Shi ◽  
Ke-Ming Wang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Ion Implantation ◽  
Low Dose ◽  
Refractive Index Increase ◽  
Extraordinary Refractive Index

Large refractive index change induced by ion implantation in lithium niobate

1974 ◽  
Vol 25 (6) ◽  
pp. 329-331 ◽  
Author(s):  
David T. Y. Wei ◽  
William W. Lee ◽  
Louis R. Bloom
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Ion Implantation ◽  
Refractive Index Change ◽  
Index Change

Refractive Index Profiles of Ion-Implantation Waveguides Formed on Lithium Niobate and Lithium Tantalate Crystals

1997 ◽  
Vol 36 (Part 1, No. 7A) ◽  
pp. 4323-4325 ◽  
Author(s):  
Fei Lu ◽  
Ming-Qi Meng ◽  
Ke-Ming Wang ◽  
Xiang-Dong Liu ◽  
Huan-Chu Chen
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Ion Implantation ◽  
Lithium Tantalate

Refractive index tailoring in congruent Lithium Niobate by ion implantation

2010 ◽  
Vol 268 (19) ◽  
pp. 2911-2914 ◽  
Author(s):  
S. Sugliani ◽  
M. Bianconi ◽  
G.G. Bentini ◽  
M. Chiarini ◽  
P. De Nicola ◽  
...  
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Ion Implantation ◽  
Congruent Lithium Niobate

Model of refractive-index changes in lithium niobate waveguides fabricated by ion implantation

2007 ◽  
Vol 75 (19) ◽  
Author(s):  
Yi Jiang ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Feng Chen ◽  
Chuan-Lei Jia ◽  
...  
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Ion Implantation ◽  
Index Changes

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

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