Low-dose Si ion implantation into semi-insulating LEC GaAs

AbstractStrain measurements in AlxGa1−x As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 1015 cm−2, no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 1012 cm−2. Interpretation of the rocking curves suggests that low-dose implantations release strain in the AlxGa1−x As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible.

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Si-ion implantation in GaAs and AlxGa1−xAs

Vacuum ◽

10.1016/0042-207x(89)90431-4 ◽

1989 ◽

Vol 39 (5) ◽

pp. 508

Keyword(s):

Ion Implantation ◽

Si Ion Implantation

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A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

MRS Proceedings ◽

10.1557/proc-27-187 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

J.C. Soares ◽

A.A. Melo ◽

M.F. DA Silva ◽

E.J. Alves ◽

K. Freitag ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Low Dose ◽

Correlation Method ◽

High Dose ◽

Tetrahedral Sites ◽

Time Differential ◽

Before And After ◽

Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

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Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

Semiconductor Science and Technology ◽

10.1088/0268-1242/6/9/013 ◽

1991 ◽

Vol 6 (9) ◽

pp. 912-915 ◽

Cited By ~ 3

Author(s):

G Zou ◽

R Pereira ◽

M de Potter ◽

M Van Hove ◽

W De Raedt ◽

...

Keyword(s):

Ion Implantation ◽

Hydrogen Plasma ◽

Highly Uniform ◽

Si Ion Implantation

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Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

MRS Proceedings ◽

10.1557/proc-262-1079 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 7

Author(s):

D. Y. C. Lie ◽

A. Vantomme ◽

F. Eisen ◽

M. -A. Nicolet ◽

V. Arbet-Engels ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Defect Concentration ◽

Double Crystal ◽

X Ray ◽

Positive Strain ◽

Independent Coefficient ◽

The Relationship ◽

Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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