High gain broadband Yb:CaF2 booster amplifier pumped by a 976 nm high power fiber laser

Author(s):  
P. Sevillano ◽  
P. Camy ◽  
J.-L. Doualan ◽  
J. Limpert ◽  
R. Moncorgé ◽  
...  
Keyword(s):  
Author(s):  
Jay W. Dawson ◽  
Paul H. Pax ◽  
Graham S. Allen ◽  
Derrek R. Drachenberg ◽  
Victor V. Khitrov ◽  
...  
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2008 ◽  
Author(s):  
Naoyuki Matsumoto ◽  
Yousuke Kawahito ◽  
Masami Mizutani ◽  
Seiji Katayama

Photonics ◽  
2021 ◽  
Vol 8 (1) ◽  
pp. 15
Author(s):  
Mehmetcan Akbulut ◽  
Leonid Kotov ◽  
Kort Wiersma ◽  
Jie Zong ◽  
Maohe Li ◽  
...  

We report on an eye-safe, transform-limited, millijoule energy, and high average power fiber laser. The high gain and short length of the NP phosphate-glass fibers enable the SBS-free operation with kW level peak power. The output energy is up to 1.3 mJ, and the average power is up to 23 W at an 18 kHz repetition rate with 600 ns pulses (peak power > 2.1 kW). The PER is ≈16 dB and the M2 of the beam is 1.33 × 1.18. The coherent LIDAR Figure Of Merit (FOM) is 174 mJ*sqrt(Hz), which to our knowledge is the highest reported for a fiber laser. We also report 0.75 mJ energy and >3.7 kW peak power with down to 200 ns pulses and up to 1.21 mJ energy with a 3–5 kHz repetition rate operation of the current system.


Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.


2005 ◽  
Vol 17 (2) ◽  
pp. 306-308 ◽  
Author(s):  
L.B. Fu ◽  
M. Ibsen ◽  
D.J. Richardson ◽  
J. Nilsson ◽  
D.N. Payne ◽  
...  
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2018 ◽  
Vol 57 (3) ◽  
pp. 485 ◽  
Author(s):  
Ming-Jian Yan ◽  
Zheng Wang ◽  
Ling-Qiang Meng ◽  
Lu Yin ◽  
Zhi-Gang Han ◽  
...  
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