Time-resolved photoluminescence from GaAs/AlxGa1−xAs quantum wells grown by metal-organic chemical vapor deposition

1985 ◽  
Author(s):  
J. E. FOUQUET ◽  
A. E. SIEGMAN ◽  
ROBERT D. BURNHAM ◽  
T. L. PAOLI
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Time Resolved ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Time Resolved Photoluminescence

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Jae Ho Song ◽  
Jhang W. Lee ◽  
P.W. Yu ◽  
Mee-Yi Ryu ◽  
J. Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Localized States ◽  
Organic Chemical ◽  
Time Resolved ◽  
Temperature Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Recombination Dynamics

AbstractWe investigated the recombination dynamics of the AlInGaN grown by a pulsed metal organic chemical vapor deposition (PMOCVD) by using the temperature dependent photoluminescence (PL) and time resolved photoluminescence (TRPL). The indium mole fractions of our samples are 0-3% and the PL measurement temperatures are 10-300K. The PL data show that AlInGaN layers with higher indium ratios exhibit significantly stronger PL intensities and less intensity reduction to the temperature increase. The TRPL data show that higher indium layers yield shorter lifetime in the low temperature range and longer lifetime in the high temperature range. These results indicate that the indium contents into the AlInGaN layers generate more localized states, which are likely to make the recombination processes in the AlInGaN layers less sensitive to the variation of the temperature.

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

RSC Advances ◽  
2015 ◽  
Vol 5 (92) ◽  
pp. 75211-75217 ◽  
Author(s):  
Hailiang Dong ◽  
Jing Sun ◽  
Shufang Ma ◽  
Jian Liang ◽  
Bingshe Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Photoelectric Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Indium Diffusion

InGaAs/GaAsP MQWs grown by metal–organic chemical vapor deposition at different growth temperatures generated an indium diffusion zone (InGaAsP) between InGaAs and GaAsP.

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