Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Metal-Organic Chemical Vapor Deposition

1987 ◽  
pp. 135-138
Author(s):  
I. Bar-Joseph ◽  
C. Klingshirn ◽  
D. A. B. Miller ◽  
D. S. Chemla ◽  
U. Koren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined ◽  
Organic Chemical Vapor Deposition

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

2015 ◽  
Vol 764-765 ◽  
pp. 1250-1254
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Incident Power ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

RSC Advances ◽  
2015 ◽  
Vol 5 (92) ◽  
pp. 75211-75217 ◽  
Author(s):  
Hailiang Dong ◽  
Jing Sun ◽  
Shufang Ma ◽  
Jian Liang ◽  
Bingshe Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Photoelectric Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Indium Diffusion

InGaAs/GaAsP MQWs grown by metal–organic chemical vapor deposition at different growth temperatures generated an indium diffusion zone (InGaAsP) between InGaAs and GaAsP.

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