Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition

2009 ◽  
Vol 95 (5) ◽  
pp. 051102 ◽  
Author(s):  
Asaf Albo ◽  
Catherine Cytermann ◽  
Gad Bahir ◽  
Dan Fekete
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Organic Chemical ◽  
Nitrogen Incorporation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Electrical and Optical Characteristics of Two-Dimensional MoS2 Film Grown by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 20 (6) ◽  
pp. 3563-3567 ◽  
Author(s):  
Donghwan Kim ◽  
Yonghee Jo ◽  
Dae Hyun Jung ◽  
Jae Suk Lee ◽  
TaeWan Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Layer Structure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Surface Element ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Atomically thin molybdenum disulfide (MoS2) films were synthesized on a SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS2 film exhibits an electron mobility of 1.3×10−4 cm2/V·s and an on/off ratio of 6.5×102 at room temperature.

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