Extended open cavities for polaritonic devices and exciton-polariton condensation: Low threshold for non-linear emission with low quantum efficiency emitters

Author(s):  
J. Gómez Rivas ◽  
M. Ramezani
Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 566
Author(s):  
Bo Lu ◽  
Chen-Rui Fan ◽  
Jun-Yang Song ◽  
Chuan Wang

Optical parametric oscillation can convert the input laser into a couple of coherent optical output with signal and idler frequencies. It is an important method for the realization of the broadband middle infrared tunable lasers. The optical parametric oscillation process depends on the ultra-fast non-linear response of matter to light with a certain pump power. Therefore, reducing the pump threshold of the optical parametric oscillation process and improving the energy conversion efficiency are of great significance to the study of non-linear optics. In this paper, we construct a dimer system that couples a passive non-linear resonator to an active resonator. Based on the dimer system, an ultra-low threshold optical parametric oscillation generation method is proposed. By coupling the gain pump mode, the non-linear effect is effectively enhanced, the pump power threshold is reduced to half of when there is no gain, and the energy conversion efficiency is increased. We believe this research provides a feasible method for a low-threshold tunable and easy-to-integrate optical parametric oscillation laser source.


1999 ◽  
Vol 74 (4) ◽  
pp. 483-485 ◽  
Author(s):  
M. Kamp ◽  
J. Hofmann ◽  
A. Forchel ◽  
F. Schäfer ◽  
J. P. Reithmaier

2016 ◽  
Vol 18 (23) ◽  
pp. 15964-15971 ◽  
Author(s):  
Alexander Yu. Tolbin ◽  
Mikhail S. Savelyev ◽  
Alexander Yu. Gerasimenko ◽  
Larisa G. Tomilova ◽  
Nikolay S. Zefirov

The possibility of developing new advanced optical limiters of laser radiation at 532 nm with low limiting thresholds has been demonstrated on thermally stable phthalocyanine J-type dimeric complexes of Mg, Zn, Cu, Ni, and Co.


1992 ◽  
Vol 28 (6) ◽  
pp. 595 ◽  
Author(s):  
G. Zhang ◽  
J. Näppi ◽  
K. Vänttinen ◽  
H. Asonen ◽  
M. Pessa

1985 ◽  
Vol 58 (4) ◽  
pp. 1686-1688 ◽  
Author(s):  
A. Antreasyan ◽  
C. Y. Chen ◽  
S. G. Napholtz ◽  
D. P. Wilt

1982 ◽  
Vol 18 (16) ◽  
pp. 690 ◽  
Author(s):  
B.F. Levine ◽  
J.P. van der Ziel ◽  
R.A. Logan ◽  
C.G. Bethea

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.


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