Thermally stable J-type phthalocyanine dimers as new non-linear absorbers for low-threshold optical limiters

2016 ◽  
Vol 18 (23) ◽  
pp. 15964-15971 ◽  
Author(s):  
Alexander Yu. Tolbin ◽  
Mikhail S. Savelyev ◽  
Alexander Yu. Gerasimenko ◽  
Larisa G. Tomilova ◽  
Nikolay S. Zefirov

The possibility of developing new advanced optical limiters of laser radiation at 532 nm with low limiting thresholds has been demonstrated on thermally stable phthalocyanine J-type dimeric complexes of Mg, Zn, Cu, Ni, and Co.

2014 ◽  
Vol 52 (6) ◽  
pp. 89-94
Author(s):  
N. Dumbrova ◽  
◽  
N. Molchanyuk ◽  
T. Romanova ◽  
N. Gavronskaya ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 566
Author(s):  
Bo Lu ◽  
Chen-Rui Fan ◽  
Jun-Yang Song ◽  
Chuan Wang

Optical parametric oscillation can convert the input laser into a couple of coherent optical output with signal and idler frequencies. It is an important method for the realization of the broadband middle infrared tunable lasers. The optical parametric oscillation process depends on the ultra-fast non-linear response of matter to light with a certain pump power. Therefore, reducing the pump threshold of the optical parametric oscillation process and improving the energy conversion efficiency are of great significance to the study of non-linear optics. In this paper, we construct a dimer system that couples a passive non-linear resonator to an active resonator. Based on the dimer system, an ultra-low threshold optical parametric oscillation generation method is proposed. By coupling the gain pump mode, the non-linear effect is effectively enhanced, the pump power threshold is reduced to half of when there is no gain, and the energy conversion efficiency is increased. We believe this research provides a feasible method for a low-threshold tunable and easy-to-integrate optical parametric oscillation laser source.


1991 ◽  
Vol 236 ◽  
Author(s):  
Peter R. Herman ◽  
Boyi Chen ◽  
David J. Moore ◽  
Mark Canaga-Retnam

AbstractExcimer lasers sources of 193nm and 157 nm wavelength were used to obtain new photoablation etching rates for several materials of interest to the microelectronics industry. The harder 157nm radiation provided lower ablation rates and smaller threshold fluences for Polyimide and Polymethyl Methacrylate (PMMA) than with 193nm. For normally robust materials like quartz and Teflon (PTFE), the 157nm laser produced clean and smooth ablation sites with low threshold fluences of 620mJ/cm2 and 68mJ/cm2, respectively, features impossible to obtain with conventional excimer lasers at longer wavelengths. The data should help define new micromachining applications of these two materials for the electronic, optical or medical industry. Results are also reported for GaAs and InP based materials which are found to undergo moderate etch rates of 30-80nm/pulse at fluences of ∼3J/cm2, but suffer thermal damage and material segregation due to surface melting.


2005 ◽  
Vol 106 ◽  
pp. 27-30 ◽  
Author(s):  
Nikolai Tarasenko ◽  
Andrei Butsen ◽  
Gvidona Shevchenko ◽  
Ilona Yakutik

In this paper studies of the changes of the morphology of silver colloidal nanoparticles under laser irradiation at different fluences and wavelengths have been presented. Silver nanoparticles of size 10-30 nm were prepared in a gelatin stabilized AgNO3 solution under reduction with K-Na-tartrate. They were then exposed to pulsed laser radiation at 532 nm, 400 nm and 266 nm. In addition to the fragmented particles, relatively larger-size (1400-1500 nm) rightangled structures were found to be formed in the solution. The experimental conditions favouring laser-induced transformation of the morphology of nanoparticles have been determined.


2004 ◽  
Vol 71 (3) ◽  
pp. 130 ◽  
Author(s):  
I. M. Belousova ◽  
V. P. Belousov ◽  
O. B. Danilov ◽  
N. G. Mironova ◽  
T. D. Murav'eva ◽  
...  

2011 ◽  
Vol 480-481 ◽  
pp. 30-35 ◽  
Author(s):  
Zhu Bo Liu ◽  
Xiao Hong Jiang ◽  
Bing Zhou ◽  
M.A. Yarmolenko ◽  
D.L. Gorbachev ◽  
...  

The organic-silicon films, polytetrafluorethylene (PTFE) films and its composite films with copper have been fabricated from an active gas phase by pulse laser dispersion from initial powder species. The features of all films obtained were studied with the application of attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy. Our results suggest that the wavelength of laser radiation impact a strong effect on the molecular structure of all films. Specifically, the peaks corresponding to the detachment of C-H bonds in the organic-silicon films and its Cu doped films at a laser wavelength of 532 nm and the destruction of the Si-O-Si groups at 266 nm due to the ultraviolet radiation have been observed. Interestingly, the concentration of Si-С6Н5 groups relative increases with a decremental of the wavelength of laser radiation. In addition, the PTFE films formed at a laser wavelength of 355 nm presented a lower order degree and high amorphous phase, while PTFE-Cu composite films at laser wavelength 266 nm exhibited enhanced crystallinity due to the presence of copper species, wherein being served as nucleation centers. Remarkably, the wavelengths of laser radiation nearly play no effect on the orderness of PTFE-Cu composite films.


2003 ◽  
Vol 59 (11) ◽  
pp. i107-i108 ◽  
Author(s):  
Tongqing Sun ◽  
Feng Pan ◽  
Ruji Wang ◽  
Guangqiu Shen ◽  
Xiaoqing Wang ◽  
...  

The title compound, tricadmium trizinc tetraborate, Cd3Zn3(BO3)4, is a new non-linear optical (NLO) crystal and its structure has been determined by single-crystal X-ray diffraction. This compound is composed of planar [BO3]3− groups sharing O atoms with CdO4 or ZnO4 tetrahedra. The BO3 triangles are located on threefold axes and are arranged with nearly the same orientation. The Cd and Zn atoms are disordered on the same site in the proportion 1:1. A strong second harmonic generation of Nd:YAG laser radiation (λ = 1064 nm) has been observed for a crystal of the title compound.


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