Increasing the extraction efficiency of a light-emitting diode using a pyramid-like phosphor layer

2019 ◽  
Vol 86 (10) ◽  
pp. 671
Author(s):  
T. Ya. Orudzhev ◽  
S. G. Abdullaeva ◽  
R. B. Dzhabbarov
2000 ◽  
Vol 637 ◽  
Author(s):  
Alexei A. Erchak ◽  
Daniel J. Ripin ◽  
Shanhui Fan ◽  
John D. Joannopoulos ◽  
Erich P. Ippen ◽  
...  

AbstractEnhanced light output is observed from a light-emitting diode (LED) structure containing a two-dimensional (2D) photonic crystal. The capture of emitted light into planar waveguide modes reduces the extraction efficiency of LEDs. Here, 2D photonic crystals are utilized to: 1) enhance the extraction of light in the vertical direction from an LED and 2) enhance optical pumping by directly coupling light from a pump laser into the LED structure. Spatially and spectrally-resolved photoluminescence (PL) is used to characterize the enhancements. A 100-fold enhancement in extraction for a single wavelength into the vertical direction is obtained without the photonic crystal penetrating the active material.


2003 ◽  
Vol 82 (21) ◽  
pp. 3779-3781 ◽  
Author(s):  
Yong-Jae Lee ◽  
Se-Heon Kim ◽  
Joon Huh ◽  
Guk-Hyun Kim ◽  
Yong-Hee Lee ◽  
...  

2020 ◽  
Vol 12 (5) ◽  
pp. 647-651 ◽  
Author(s):  
Young Hoon Sung ◽  
Jaemin Park ◽  
Eun-Seo Choi ◽  
Hee Chul Lee ◽  
Heon Lee

A conical-shaped Si dioxide nano-pattern was employed to sapphire substrate in order to improve the light extraction efficiency of light-emitting diodes. The conical-shaped Si dioxide nano-patterns were fabricated on a 2-inch sapphire wafer using direct imprinting of hydrogen silsesquioxane material. A blue-LED structure was grown on conical-shaped silicon-dioxide nano-patterned sapphire substrates. Photoluminescence and electroluminescence measurements were used to confirm the effectiveness of the nanoscale Si oxide patterned sapphire. An improvement in the luminescence efficiency was observed when nanoscale Si oxide patterned sapphire substrate was used. 1.5 times higher PL intensity and 1.6 times higher EL intensity were observed for GaN LED structure grown on nanoscale Si oxide patterned sapphire, compared to LED structure grown on conventional flat sapphire wafer.


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