Methods to measure the radiant flux of light-emitting diodes

2021 ◽  
Vol 88 (7) ◽  
pp. 401
Author(s):  
A. A. Shul’ga
2011 ◽  
Vol 29 (15) ◽  
pp. 2285-2291 ◽  
Author(s):  
Christian Sommer ◽  
Frank Reil ◽  
Joachim R. Krenn ◽  
Paul Hartmann ◽  
Peter Pachler ◽  
...  

2013 ◽  
Vol 24 (5) ◽  
pp. 055101
Author(s):  
Clint A Naquin ◽  
Omar A Hasan ◽  
Wei-Ting Liou ◽  
Roxanne R Lee ◽  
Armand J Halbert ◽  
...  

2007 ◽  
Vol 46 (23) ◽  
pp. 5974 ◽  
Author(s):  
Hisashi Masui ◽  
Natalie N. Fellows ◽  
Hitoshi Sato ◽  
Hirokuni Asamizu ◽  
Shuji Nakamura ◽  
...  

2009 ◽  
Vol 20 (9) ◽  
pp. 095111 ◽  
Author(s):  
P Hanselaer ◽  
A Keppens ◽  
S Forment ◽  
W R Ryckaert ◽  
G Deconinck

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


Sign in / Sign up

Export Citation Format

Share Document