Very-low-threshold current density continuous-wave quantum-dot laser diode

2008 ◽  
Vol 44 (11) ◽  
pp. 679 ◽  
Author(s):  
S. Freisem ◽  
G. Ozgur ◽  
K. Shavritranuruk ◽  
H. Chen ◽  
D.G. Deppe
Keyword(s):  
Quantum Dot ◽  
Laser Diode ◽  
Current Density ◽  
Continuous Wave ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Laser ◽  
Low Threshold

p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

2006 ◽  
Vol 89 (7) ◽  
pp. 073113 ◽  
Author(s):  
H. Y. Liu ◽  
S. L. Liew ◽  
T. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Laser ◽  
Low Threshold ◽  
Differential Efficiency ◽  
Gaas Quantum Dot

scholarly journals InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2315
Author(s):  
Alexey E. Zhukov ◽  
Natalia V. Kryzhanovskaya ◽  
Eduard I. Moiseev ◽  
Anna S. Dragunova ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Elevated Temperatures ◽  
Continuous Wave ◽  
Electrical Contact ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Constant Current ◽  
Surface Protection ◽  
Microdisk Lasers

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

scholarly journals Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

2012 ◽  
Vol 20 (20) ◽  
pp. 22181 ◽  
Author(s):  
Andrew Lee ◽  
Qi Jiang ◽  
Mingchu Tang ◽  
Alwyn Seeds ◽  
Huiyun Liu
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Si Substrate ◽  
Quantum Dot Laser ◽  
Low Threshold ◽  
Current Densities ◽  
Gaas Quantum Dot

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers

2005 ◽  
Vol 44 (4B) ◽  
pp. 2520-2522 ◽  
Author(s):  
Sumon K. Ray ◽  
Kristian M. Groom ◽  
Richard A. Hogg ◽  
Hui-Yun Liu ◽  
Ian R. Sellers ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Operating Characteristics ◽  
Low Threshold
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