High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

2006 ◽  
Vol 153 (6) ◽  
pp. 280-283 ◽  
Author(s):  
C.Y. Jin ◽  
T.J. Badcock ◽  
M. Hopkinson ◽  
H.Y. Liu ◽  
R. Royce ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Negative Characteristic ◽  
Gaas Quantum Dot

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers

2007 ◽  
Vol 90 (11) ◽  
pp. 111102 ◽  
Author(s):  
T. J. Badcock ◽  
R. J. Royce ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
H. Y. Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Self Assembled ◽  
Negative Characteristic

scholarly journals 1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Gaas Quantum Dot

HIGH-PERFORMANCE RIDGE-WAVEGUIDE MULTI-STACK (N=2, 5 AND 10)InAs/InGaAs/GaAs QUANTUM DOT LASERS of 1.3 μm RANGE

2004 ◽  
Vol 03 (01n02) ◽  
pp. 187-192
Author(s):  
G. LIN ◽  
I. F. CHEN ◽  
F. J. LAY ◽  
J. Y. CHI ◽  
D. A. LIVSHITS ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
High Performance ◽  
Continuous Wave ◽  
Spectral Characteristics ◽  
Single Mode ◽  
Threshold Current ◽  
Ridge Waveguide ◽  
Low Threshold ◽  
Gaas Quantum Dot

We have investigated light-current and spectral characteristics of 2-, 5- and 10-stack InAs / InGaAs / GaAs quantum dot (QD) ridge-waveguide lasers grown by MBE. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD laser. Simultaneous lasing at ground- and excited-states was observed. This effect is accounted for the finite time of carriers capture to the ground-state in QDs. Multi-stack QD structures enables to maintain continuous-wave (CW) ground-state lasing up to the current density of 100×Jth and to achieve the highest output power and efficiency ever recorded for any single-mode lasers of 1.3-μm-wavelength range.

Low threshold current operation of self-assembled InAs∕GaAs quantum dot lasers by metal organic chemicalvapour deposition

2003 ◽  
Vol 39 (15) ◽  
pp. 1130 ◽  
Author(s):  
J. Tatebayashi ◽  
N. Hatori ◽  
H. Kakuma ◽  
H. Ebe ◽  
H. Sudo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Current ◽  
Quantum Dot Lasers ◽  
Metal Organic ◽  
Low Threshold ◽  
Current Operation ◽  
Self Assembled ◽  
Gaas Quantum Dot
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