On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

2019 ◽  
Vol 17 (12) ◽  
pp. 122301
Author(s):  
Kangkai Tian ◽  
Chunshuang Chu ◽  
Jiamang Che ◽  
Hua Shao ◽  
Jianquan Kou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Screening Effect ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength

2013 ◽  
Vol 34 (5) ◽  
pp. 623-628
Author(s):  
李梅娇 LI Mei-jiao ◽  
李凯 LI Kai ◽  
朱明军 ZHU Ming-jun ◽  
郭志友 GUO Zhi-you ◽  
孙慧卿 SUN Hui-qing
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Structure Optimization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1308-L1310 ◽  
Author(s):  
Muhammad Asif Khan ◽  
Vinod Adivarahan ◽  
Jian Ping Zhang ◽  
Changqing Chen ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
Sign in / Sign up

Export Citation Format

Share Document