scholarly journals Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

2019 ◽  
Vol 27 (25) ◽  
pp. 36405 ◽  
Author(s):  
Jianwen Sun ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
Xiaoyan Yi ◽  
...  
Keyword(s):  
Tungsten Trioxide ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet ◽  
Gan Heterostructure

Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors

2020 ◽  
Vol 2 (10) ◽  
pp. 3358-3365
Author(s):  
Maria Isabel Pintor-Monroy ◽  
Bayron L. Murillo-Borjas ◽  
Manuel A. Quevedo-Lopez
Keyword(s):  
Thin Films ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

2012 ◽  
Vol 51 ◽  
pp. 090115 ◽  
Author(s):  
Meiyong Liao ◽  
Liwen Sang ◽  
Tokuyuku Teraji ◽  
Masataka Imura ◽  
Jose Alvarez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Comprehensive Investigation ◽  
Ultraviolet Detectors ◽  
Single Crystal Diamond ◽  
Deep Ultraviolet

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

2012 ◽  
Vol 101 (17) ◽  
pp. 171112 ◽  
Author(s):  
J. Li ◽  
S. Majety ◽  
R. Dahal ◽  
W. P. Zhao ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Optical Absorption ◽  
Hexagonal Boron Nitride ◽  
Dielectric Strength ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Sputtering Ambient Effects on Functionality of Al-doped Gallium Oxide Films for Deep-Ultraviolet Detectors

2019 ◽  
Author(s):  
Po-Wei Chen ◽  
Shiau-Yuan Huang ◽  
Chao-Chun Wang ◽  
Po-Wen Hsiao ◽  
Shuo-Huang Yuan ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Oxide Films ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Recent Progress in AlGaN/GaN Based Optoelectronic Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
M. A. Khan ◽  
Q. Chen ◽  
C. J. Sun ◽  
J. W. Yang ◽  
M. S. Shur
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Material System ◽  
Light Emitting ◽  
Ultraviolet Detectors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

ABSTRACTWe review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

Deep-ultraviolet detectors based on oxygen-/fluorine-terminated (100) diamond

2016 ◽  
Vol 100 ◽  
pp. 258-265 ◽  
Author(s):  
F.N. Li ◽  
J.W. Zhang ◽  
X.L. Wang ◽  
Z.C. Liu ◽  
W. Wang ◽  
...  
Keyword(s):  
Ultraviolet Detectors ◽  
Deep Ultraviolet ◽  
Oxygen Fluorine

Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

2012 ◽  
Vol 51 (9R) ◽  
pp. 090115 ◽  
Author(s):  
Meiyong Liao ◽  
Liwen Sang ◽  
Tokuyuku Teraji ◽  
Masataka Imura ◽  
Jose Alvarez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Comprehensive Investigation ◽  
Ultraviolet Detectors ◽  
Single Crystal Diamond ◽  
Deep Ultraviolet
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