Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors

2020 ◽  
Vol 2 (10) ◽  
pp. 3358-3365
Author(s):  
Maria Isabel Pintor-Monroy ◽  
Bayron L. Murillo-Borjas ◽  
Manuel A. Quevedo-Lopez
2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).


Carbon ◽  
2015 ◽  
Vol 81 ◽  
pp. 807-813 ◽  
Author(s):  
Hsiang-Lin Liu ◽  
Syahril Siregar ◽  
Eddwi H. Hasdeo ◽  
Yasuaki Kumamoto ◽  
Chih-Chiang Shen ◽  
...  

2018 ◽  
Vol 57 (3) ◽  
pp. 538 ◽  
Author(s):  
Wenhao Li ◽  
Xiaolong Zhao ◽  
Yusong Zhi ◽  
Xuhui Zhang ◽  
Zhengwei Chen ◽  
...  

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Si-Han Tsai ◽  
Sarbani Basu ◽  
Chiung-Yi Huang ◽  
Liang-Ching Hsu ◽  
Yan-Gu Lin ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17213-17221 ◽  
Author(s):  
Wen-Qing Liang ◽  
Ying Li ◽  
Jing-Li Ma ◽  
Yue Wang ◽  
Jing-Jing Yan ◽  
...  

An air-stable and deep-ultraviolet-sensitive photodetector was fabricated using a solution-processed ternary copper halide Cs3Cu2I5 thin film as the light absorber.


2008 ◽  
Vol 114 (5) ◽  
pp. 1123-1129 ◽  
Author(s):  
A. Ievtushenko ◽  
G. Lashkarev ◽  
V. Lazorenko ◽  
V. Karpyna ◽  
V. Sichkovskyi ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.


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