scholarly journals Laser energy absorption prediction of silicon substrate surface from a mid- and high-spatial frequency error

2020 ◽  
Vol 28 (23) ◽  
pp. 33795
Author(s):  
Ye Tian ◽  
Gang Zhou ◽  
Shuai Xue ◽  
Feng Shi ◽  
Ci Song ◽  
...  
2017 ◽  
Vol 124 ◽  
pp. 287-291 ◽  
Author(s):  
T. Maeji ◽  
K. Ibano ◽  
S. Yoshikawa ◽  
D. Inoue ◽  
S. Kuroyanagi ◽  
...  

2007 ◽  
Vol 127 ◽  
pp. 307-312 ◽  
Author(s):  
Takuya Tsumura ◽  
Fu Xing Ye ◽  
Taichi Murakami ◽  
Hideo Nakajima ◽  
Kazuhiro Nakata

Lotus-type porous metals, whose pores are aligned in one direction by unidirectional solidification, have a unique combination of properties. These are expected as revolutionary engineering materials with anisotropy of the properties. For the industrial use of the lotus-type porous metals, a reliable joining technology is required. We already reported the melting property of a few lotus-type porous metals by laser welding. These results indicated that these materials possessed anisotropy of melting property with the pore direction perpendicular and parallel to the specimen surface, especially remarkable anisotropy was obtained for the copper specimen owing to the difference of the laser energy absorption to the specimen surface. In this report, the three-dimensional heat transfer analyses, which take into account the difference of the laser energy absorption comparing with the anisotropy of thermal conductivity inherent to lotus-type porous metals, were performed by commercial code with user-defined subroutine. Predicted profile of weld fusion zone is in good agreement with the cross-sectional view obtained by experiments.


2014 ◽  
Vol 953-954 ◽  
pp. 1045-1048
Author(s):  
Guo Feng Ma ◽  
Heng Ye ◽  
Hong Lin Zhang ◽  
Chun Lin He ◽  
Li Na Sun

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.


2019 ◽  
Vol 2019 (05) ◽  
pp. 3567-3572
Author(s):  
Sergey A. Lizunov ◽  
◽  
Vladimir P. Zhukov ◽  
Alexander V. Bulgakov ◽  
Nadezhda M. Bulgakova

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