Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

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High and Moderate-Level Vacuum Packaging of Vibratory MEMS

International Symposium on Microelectronics ◽

10.4071/isom-2013-wp42 ◽

2013 ◽

Vol 2013 (1) ◽

pp. 000705-000710 ◽

Cited By ~ 8

Author(s):

Igor P. Prikhodko ◽

Brenton R. Simon ◽

Gunjana Sharma ◽

Sergei A. Zotov ◽

Alexander A. Trusov ◽

...

Keyword(s):

Vacuum Packaging ◽

Moderate Level ◽

Silicon On Insulator ◽

Quality Factors ◽

High Q ◽

Hermetic Sealing ◽

Hemispherical Resonator ◽

Q Factors ◽

Grade Performance

We report vacuum packaging procedures for low-stress die attachment and versatile hermetic sealing of resonant MEMS. The developed in-house infrastructure allows for both high and moderate-level vacuum packaging addressing the requirements of various applications. Prototypes of 100 μm silicon-on-insulator Quadruple Mass Gyroscopes (QMGs) were packaged using the developed process with and without getters. Characterization of stand-alone packaged devices with no getters resulted in stable quality factors (Q-factors) of 1000 (corresponding to 0.5 Torr vacuum level), while devices sealed with activated getters demonstrated Q-factors of 1.2 million (below 0.1 mTorr level inside the package). Due to the high Q-factors achieved in this work, we project that the QMG used in this work can potentially reach the navigation-grade performance, potentially bridging the gap between the inertial silicon MEMS and the state-of-the-art fused quartz hemispherical resonator gyroscopes.

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A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines ◽

10.3390/mi11080737 ◽

2020 ◽

Vol 11 (8) ◽

pp. 737

Author(s):

Tianyun Wang ◽

Zeji Chen ◽

Qianqian Jia ◽

Quan Yuan ◽

Jinling Yang ◽

...

Keyword(s):

Bias Voltage ◽

Integrated Circuit ◽

Nonlinear Behavior ◽

Silicon On Insulator ◽

Transduction Efficiency ◽

Air Gaps ◽

High Q ◽

Bulk Mode ◽

Q Factors ◽

Quality Factor Q

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

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