High and Moderate-Level Vacuum Packaging of Vibratory MEMS

2013 ◽  
Vol 2013 (1) ◽  
pp. 000705-000710 ◽  
Author(s):  
Igor P. Prikhodko ◽  
Brenton R. Simon ◽  
Gunjana Sharma ◽  
Sergei A. Zotov ◽  
Alexander A. Trusov ◽  
...  
Keyword(s):  
Vacuum Packaging ◽  
Moderate Level ◽  
Silicon On Insulator ◽  
Quality Factors ◽  
High Q ◽  
Hermetic Sealing ◽  
Hemispherical Resonator ◽  
Q Factors ◽  
Grade Performance

We report vacuum packaging procedures for low-stress die attachment and versatile hermetic sealing of resonant MEMS. The developed in-house infrastructure allows for both high and moderate-level vacuum packaging addressing the requirements of various applications. Prototypes of 100 μm silicon-on-insulator Quadruple Mass Gyroscopes (QMGs) were packaged using the developed process with and without getters. Characterization of stand-alone packaged devices with no getters resulted in stable quality factors (Q-factors) of 1000 (corresponding to 0.5 Torr vacuum level), while devices sealed with activated getters demonstrated Q-factors of 1.2 million (below 0.1 mTorr level inside the package). Due to the high Q-factors achieved in this work, we project that the QMG used in this work can potentially reach the navigation-grade performance, potentially bridging the gap between the inertial silicon MEMS and the state-of-the-art fused quartz hemispherical resonator gyroscopes.

scholarly journals A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 737
Author(s):  
Tianyun Wang ◽  
Zeji Chen ◽  
Qianqian Jia ◽  
Quan Yuan ◽  
Jinling Yang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Integrated Circuit ◽  
Nonlinear Behavior ◽  
Silicon On Insulator ◽  
Transduction Efficiency ◽  
Air Gaps ◽  
High Q ◽  
Bulk Mode ◽  
Q Factors ◽  
Quality Factor Q

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

scholarly journals Fabrication of Crystalline Microresonators of High Quality Factors with a Controllable Wedge Angle on Lithium Niobate on Insulator

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1218 ◽  
Author(s):  
Jianhao Zhang ◽  
Zhiwei Fang ◽  
Jintian Lin ◽  
Junxia Zhou ◽  
Min Wang ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Femtosecond Laser ◽  
Wedge Angle ◽  
Quality Factors ◽  
High Quality ◽  
Surface Smoothness ◽  
High Q ◽  
Q Factors

We report the fabrication of crystalline microresonators of high quality (Q) factors with a controllable wedge angle on lithium niobate on insulator (LNOI). Our technique relies on a femtosecond laser assisted chemo-mechanical polish, which allows us to achieve ultrahigh surface smoothness as critically demanded by high Q microresonator applications. We show that by refining the polish parameters, Q factors as high as 4.7 × 107 can be obtained and the wedge angle of the LNOI can be continuously tuned from 9° to 51°.

scholarly journals A Temperature-Insensitive Resonant Pressure Micro Sensor Based on Silicon-on-Glass Vacuum Packaging

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3866 ◽  
Author(s):  
Pengcheng Yan ◽  
Yulan Lu ◽  
Chao Xiang ◽  
Junbo Wang ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Vacuum Packaging ◽  
Silicon On Insulator ◽  
Pressure Measurements ◽  
Element Analysis ◽  
Pressure Sensitive ◽  
Order Of Magnitude ◽  
Micro Sensor ◽  
Q Factors ◽  
Fitting Error

This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz/°C was obtained in the range of −45 °C to 65 °C, which is one order of magnitude lower than the previously reported counterparts.

Single-mode silicon-on-insulator elliptical microdisk resonators with high Q factors

2011 ◽  
Author(s):  
Kang Xiong ◽  
Xi Xiao ◽  
Yingtao Hu ◽  
Zhiyong Li ◽  
Tao Chu ◽  
...  
Keyword(s):  
Single Mode ◽  
Silicon On Insulator ◽  
High Q ◽  
Microdisk Resonators ◽  
Q Factors

Compositional Mapping in Dynamic Atomic Force Microscopy in High-Q vs. Low-Q Environments: Effects of Cantilever Nonlinear Dynamics

2010 ◽  
Author(s):  
John Melcher ◽  
Arvind Raman
Keyword(s):  
Nonlinear Dynamics ◽  
Atomic Force Microscopy ◽  
Quality Factors ◽  
Force Microscopy ◽  
High Q ◽  
New Class ◽  
Atomic Force ◽  
Nanoscale Metrology ◽  
Q Factors ◽  
Local Stiffness

The ability to simultaneously map variations in topography and composition (local stiffness, adhesion, charge, hydrophillicity/phobicity, viscoelasticity) of samples in ambient and liquid environments has made dynamic atomic force microscopy (dAFM) a powerful tool for nanoscale metrology. In ambient and vacuum environments, quality factors (Q-factors) of the fundamental resonance are typically large, and the contrast channels in dAFM are relatively well understood. In liquid environments, however, Q-factors are typically low due to cantilever interactions with the surrounding viscous liquid, which introduces a new class of nonlinear dynamics that is accompanied by new contrast channels, such as, higher harmonic amplitudes and phases. In particular, we find that the interpretation of the traditional contrast channels is quite different in low-Q environments compared to high-Q environments. We present a theoretical investigation of the contrast channels in dAFM in the context of frequency modulation and tapping mode dAFM with an emphasis on low-Q environments.

scholarly journals Switchable Electromagnetically Induced Transparency with Toroidal Mode in a Graphene-Loaded All-Dielectric Metasurface

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1064 ◽  
Author(s):  
Guanghou Sun ◽  
Sheng Peng ◽  
Xuejin Zhang ◽  
Yongyuan Zhu
Keyword(s):  
Electromagnetically Induced Transparency ◽  
Modulation Depth ◽  
Optical Filters ◽  
Destructive Interference ◽  
Quality Factors ◽  
High Q ◽  
Dipole Resonance ◽  
Q Factors ◽  
Induced Transparency ◽  
Dielectric Metasurface

Active photonics based on graphene has attracted wide attention for developing tunable and compact optical devices with excellent performances. In this paper, the dynamic manipulation of electromagnetically induced transparency (EIT) with high quality factors (Q-factors) is realized in the optical telecommunication range via the graphene-loaded all-dielectric metasurface. The all-dielectric metasurface is composed of split Si nanocuboids, and high Q-factor EIT resonance stems from the destructive interference between the toroidal dipole resonance and the magnetic dipole resonance. As graphene is integrated on the all-dielectric metasurface, the modulation of the EIT window is realized by tuning the Fermi level of graphene, engendering an appreciable modulation depth of 88%. Moreover, the group velocity can be tuned from c/1120 to c/3390. Our proposed metasurface has the potential for optical filters, modulators, and switches.

scholarly journals Fabrication of Crystalline Microresonators of High Quality Factors with a Controllable Wedge Angle on Lithium Niobate on Insulator

2019 ◽  
Author(s):  
Jianhao Zhang ◽  
Zhiwei Fang ◽  
Jintian Lin ◽  
Junxia Zhou ◽  
Min Wang ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Femtosecond Laser ◽  
Wedge Angle ◽  
Quality Factors ◽  
High Quality ◽  
Surface Smoothness ◽  
High Q ◽  
Q Factors

We report fabrication of crystalline microresonators of high quality (Q) factors with a controllable wedge angle on lithium niobate on insulator (LNOI). Our technique relies on femtosecond laser assisted chemo-mechanical polish which allows us to achieve ultrahigh surface smoothness as critically demanded by high Q microresonator applications. We show that by refining the polish parameters, Q factors as high as 4.7 × 107 can be obtained and the wedge angle of the LNOI can be continuously tuned from 9° to 51°.

Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

2015 ◽  
Vol 40 (23) ◽  
pp. 5566 ◽  
Author(s):  
Weiwei Zhang ◽  
Samuel Serna ◽  
Xavier Le Roux ◽  
Carlos Alonso-Ramos ◽  
Laurent Vivien ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Ring Resonators ◽  
Slot Waveguide ◽  
High Q ◽  
Waveguide Ring ◽  
Q Factors

Novel High-Q Suspended Inductors on Alumina Ceramic Substrates

2004 ◽  
Vol 833 ◽  
Author(s):  
Lisa Woodward ◽  
Paul Woo ◽  
Mircea Capanu ◽  
Ivo Koutsaroff ◽  
C. R. Selvakumar ◽  
...  
Keyword(s):  
Air Gap ◽  
Alumina Ceramic ◽  
Quality Factors ◽  
Ceramic Substrates ◽  
Passive Components ◽  
High Q ◽  
Inductor Coil ◽  
Before And After ◽  
Q Factors ◽  
Metal Layers

ABSTRACTThe growth of the wireless industry over the past ten years has created a need for good quality passive components, and in particular high Q factor inductors. There has been a large amount of work aimed at improving the quality factors of inductors on both silicon and ceramic/insulating substrates. KAIST and other research groups have explored a MEMS technique, releasing the inductor coil to create an air gap between the coil and underpass, on silicon [1]. Typically the inductor coil has been separated by a 50 to 100μm air gap and has required special processing such as a dual exposure photoresist mold [1]. In the present work, suspended inductor coils have been fabricated and characterized on an alumina ceramic substrate [2]. The gap used was only 1μm and this was enough to increase the self-resonance frequency by up to 4GHz after release. The inductor coils were created in 6–10μm thick electroplated gold and the underpass in an aluminum layer. A sacrificial LPCVD oxide layer was used as the released dielectric. In the present study a range of inductance from 1 to 30nH was explored before and after release. The Q factors achieved in this work range from 40 to 70 in the 2 to 10 GHz range, which are some of the best Q factors reported for planar inductors (see Table I). In addition, since the architecture allowed the use of three metal layers, released transformers were also fabricated. They showed promising high frequency performance, which also will be presented. Minimum insertion loss better then –2dB was achieved between 10–12 GHz. The above described process is simple, precise, and manufacturable with the ability to extend the useful range of inductors to higher frequencies (1–10 GHz).

scholarly journals A Resonant Pressure Microsensor with a Wide Pressure Measurement Range

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 382
Author(s):  
Chao Xiang ◽  
Yulan Lu ◽  
Chao Cheng ◽  
Junbo Wang ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Measurement Range ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Pressure Measurements ◽  
Quality Factors ◽  
Deep Reactive Ion Etching ◽  
Wide Range ◽  
Form Pressure ◽  
Silicon Islands

This paper presents a resonant pressure microsensor with a wide range of pressure measurements. The developed microsensor is mainly composed of a silicon-on-insulator (SOI) wafer to form pressure-sensing elements, and a silicon-on-glass (SOG) cap to form vacuum encapsulation. To realize a wide range of pressure measurements, silicon islands were deployed on the device layer of the SOI wafer to enhance equivalent stiffness and structural stability of the pressure-sensitive diaphragm. Moreover, a cylindrical vacuum cavity was deployed on the SOG cap with the purpose to decrease the stresses generated during the silicon-to-glass contact during pressure measurements. The fabrication processes mainly contained photolithography, deep reactive ion etching (DRIE), chemical mechanical planarization (CMP) and anodic bonding. According to the characterization experiments, the quality factors of the resonators were higher than 15,000 with pressure sensitivities of 0.51 Hz/kPa (resonator I), −1.75 Hz/kPa (resonator II) and temperature coefficients of frequency of 1.92 Hz/°C (resonator I), 1.98 Hz/°C (resonator II). Following temperature compensation, the fitting error of the microsensor was within the range of 0.006% FS and the measurement accuracy was as high as 0.017% FS in the pressure range of 200 ~ 7000 kPa and the temperature range of −40 °C to 80 °C.

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