scholarly journals A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 737
Author(s):  
Tianyun Wang ◽  
Zeji Chen ◽  
Qianqian Jia ◽  
Quan Yuan ◽  
Jinling Yang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Integrated Circuit ◽  
Nonlinear Behavior ◽  
Silicon On Insulator ◽  
Transduction Efficiency ◽  
Air Gaps ◽  
High Q ◽  
Bulk Mode ◽  
Q Factors ◽  
Quality Factor Q

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

High and Moderate-Level Vacuum Packaging of Vibratory MEMS

2013 ◽  
Vol 2013 (1) ◽  
pp. 000705-000710 ◽  
Author(s):  
Igor P. Prikhodko ◽  
Brenton R. Simon ◽  
Gunjana Sharma ◽  
Sergei A. Zotov ◽  
Alexander A. Trusov ◽  
...  
Keyword(s):  
Vacuum Packaging ◽  
Moderate Level ◽  
Silicon On Insulator ◽  
Quality Factors ◽  
High Q ◽  
Hermetic Sealing ◽  
Hemispherical Resonator ◽  
Q Factors ◽  
Grade Performance

We report vacuum packaging procedures for low-stress die attachment and versatile hermetic sealing of resonant MEMS. The developed in-house infrastructure allows for both high and moderate-level vacuum packaging addressing the requirements of various applications. Prototypes of 100 μm silicon-on-insulator Quadruple Mass Gyroscopes (QMGs) were packaged using the developed process with and without getters. Characterization of stand-alone packaged devices with no getters resulted in stable quality factors (Q-factors) of 1000 (corresponding to 0.5 Torr vacuum level), while devices sealed with activated getters demonstrated Q-factors of 1.2 million (below 0.1 mTorr level inside the package). Due to the high Q-factors achieved in this work, we project that the QMG used in this work can potentially reach the navigation-grade performance, potentially bridging the gap between the inertial silicon MEMS and the state-of-the-art fused quartz hemispherical resonator gyroscopes.

Single-mode silicon-on-insulator elliptical microdisk resonators with high Q factors

2011 ◽  
Author(s):  
Kang Xiong ◽  
Xi Xiao ◽  
Yingtao Hu ◽  
Zhiyong Li ◽  
Tao Chu ◽  
...  
Keyword(s):  
Single Mode ◽  
Silicon On Insulator ◽  
High Q ◽  
Microdisk Resonators ◽  
Q Factors

Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

2015 ◽  
Vol 40 (23) ◽  
pp. 5566 ◽  
Author(s):  
Weiwei Zhang ◽  
Samuel Serna ◽  
Xavier Le Roux ◽  
Carlos Alonso-Ramos ◽  
Laurent Vivien ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Ring Resonators ◽  
Slot Waveguide ◽  
High Q ◽  
Waveguide Ring ◽  
Q Factors

scholarly journals A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1317 ◽  
Author(s):  
Jooyoung Jeon ◽  
Myounggon Kang
Keyword(s):  
Radio Frequency ◽  
Power Amplifier ◽  
Bias Voltage ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Impedance Change ◽  
Load Impedance ◽  
Power Added Efficiency

A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

2021 ◽  
Author(s):  
Yutaka Makihara ◽  
Moataz Eissa ◽  
Tomohiro AMEMIYA ◽  
Nobuhiko Nishiyama
Keyword(s):  
Phase Shift ◽  
Coupling Coefficient ◽  
Integrated Circuit ◽  
Silicon Photonics ◽  
Silicon On Insulator ◽  
Zehnder Interferometer ◽  
Directional Couplers ◽  
Photonic Integrated Circuit ◽  
Active Elements ◽  
Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

scholarly journals Fabrication and Packaging of CMUT Using Low Temperature Co-Fired Ceramic

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 553 ◽  
Author(s):  
Fikret Yildiz ◽  
Tadao Matsunaga ◽  
Yoichi Haga
Keyword(s):  
Low Temperature ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Ultrasonic Transducer ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Lateral Side ◽  
Membrane Thickness ◽  
Bonding Performance ◽  
Complex Admittance

This paper presents fabrication and packaging of a capacitive micromachined ultrasonic transducer (CMUT) using anodically bondable low temperature co-fired ceramic (LTCC). Anodic bonding of LTCC with Au vias-silicon on insulator (SOI) has been used to fabricate CMUTs with different membrane radii, 24 µm, 25 µm, 36 µm, 40 µm and 60 µm. Bottom electrodes were directly patterned on remained vias after wet etching of LTCC vias. CMUT cavities and Au bumps were micromachined on the Si part of the SOI wafer. This high conductive Si was also used as top electrode. Electrical connections between the top and bottom of the CMUT were achieved by Au-Au bonding of wet etched LTCC vias and bumps during anodic bonding. Three key parameters, infrared images, complex admittance plots, and static membrane displacement, were used to evaluate bonding success. CMUTs with a membrane thickness of 2.6 µm were fabricated for experimental analyses. A novel CMUT-IC packaging process has been described following the fabrication process. This process enables indirect packaging of the CMUT and integrated circuit (IC) using a lateral side via of LTCC. Lateral side vias were obtained by micromachining of fabricated CMUTs and used to drive CMUTs elements. Connection electrodes are patterned on LTCC side via and a catheter was assembled at the backside of the CMUT. The IC was mounted on the bonding pad on the catheter by a flip-chip bonding process. Bonding performance was evaluated by measurement of bond resistance between pads on the IC and catheter. This study demonstrates that the LTCC and LTCC side vias scheme can be a potential approach for high density CMUT array fabrication and indirect integration of CMUT-IC for miniature size packaging, which eliminates problems related with direct integration.

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Transmission Spectrum ◽  
Electron Beam Lithography ◽  
Ring Resonator ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
New Method ◽  
Ring Resonators ◽  
Q Factor ◽  
High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

scholarly journals Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform

2013 ◽  
Vol 21 (15) ◽  
pp. 18236 ◽  
Author(s):  
Qing Li ◽  
Ali A. Eftekhar ◽  
Majid Sodagar ◽  
Zhixuan Xia ◽  
Amir H. Atabaki ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vertical Integration ◽  
Silicon On Insulator ◽  
High Q

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

2005 ◽  
Vol 892 ◽  
Author(s):  
Yong-Seok Choi ◽  
Cedrik Meier ◽  
Rajat Sharma ◽  
Kevin Hennessy ◽  
Elaine D. Haberer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Light Extraction ◽  
Design Parameters ◽  
Multiple Quantum ◽  
Membrane Structures ◽  
High Q ◽  
Q Factors

AbstractWe have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

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