Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging

In this study, we developed a metal multilayer that can provide hermetic sealing after degassing the assemblies and absorbing the residual gases in the package. A package without a leak path was obtained by the direct bonding of the Au/Pt/Ti layers. After packaging, annealing at 450 °C caused thermal diffusion of the Ti underlayer atoms to the inner surface, which led to absorption of the residual gas molecules. These results indicated that a wafer coated with a Au/Pt/Ti layer can provide hermetic sealing and absorb residual gases, which can simplify vacuum packaging processes in the electronics industry.

Hermetic Seal of Organic Light Emitting Diode with Glass Frit

The components of OLED encapsulation with hermetic sealing and a 1026-day lifetime were measured by PXI-1033. The optimal characteristics were obtained when the thickness of the TPBi layer was 20 nm. This OLED obtained a maximum luminance (Lmax) of 25,849 cd/m2 at a current density of 1242 mA/cm2, an external quantum efficiency (EQE) of 2.28%, a current efficiency (CE) of 7.20 cd/A, and a power efficiency (PE) of 5.28 lm/W. The efficiency was enhanced by Lmax 17.2%/EQE 0.89%/CE 42.1%/PE 41.9%. The CIE coordinates of 0.32, 0.54 were all green OLED elements with wavelengths of 532 nm. The shear strain and leakage test gave results of 16 kgf and 8.92 × 10−9 mbar/s, respectively. The reliability test showed that the standard of MIL-STD-883 was obtained.

Lithium aluminosilicate glass-ceramics for low-temperature anodic sealing of MEMS sensors

The results of a study of the anodic bonding parameters of transparent glass-ceramics based on lithium aluminosilicates which are promising as structural materials of MEMS and MOEMS sensors are presented. A comparison of the optical transmittance of these materials and classical for MEMS industry glasses has been carried out. The glass-ceramics electrical conductivity in a wide temperature range has been measured. The procedure of hermetic sealing of glass-ceramics by the anodic bonding at temperatures of 150 – 250 °C has been worked out. A prototype of glass-ceramic atomic cell has been fabricated.

Strengthening Thermal Stability in V2O5-ZnO-BaO-B2O3-M(PO3)n Glass System (M = Al, Mg) for Laser Sealing Applications

Today, the most common way of laser sealing is using a glass frit paste and screen printer. Laser sealing using glass frit paste has some problems, such as pores, nonuniform height, imperfect hermetic sealing, etc. In order to overcome these problems, sealing using fiber types of sealant is attractive for packaging devices. In this work, (70-x)V2O5-5ZnO-22BaO-3B2O3-xM(PO3)n glasses (mol%) incorporated with xM(PO3)n concentration (where M = Mg, Al, n = 2, 3, respectively) were fabricated and their thermal, thermomechanical, and structural properties were investigated. Most importantly, for this type of sealing, the glass should have a thermal stability (ΔT) of ≥80 °C and the coefficient of thermal expansion (CTE) between the glass and panel should be 1.0 ppm/°C. The highest thermal stability ΔT of the order of 93.2 °C and 112.9 °C was obtained for the 15 mol% of Mg(PO3)2 and Al(PO3)3 doped glasses, respectively. This reveals that the bond strength and connectivity is more strongly improved by trivalent Al(PO3)3. The CTE of a (70-x)V2O5-5ZnO-22BaO-3B2O3-xAl(PO3)3 glass system (mol%) (where x = 5–15, mol%) is in the range of 9.5–15.5 (×10−6/K), which is comparable with the CTE (9–10 (×10−6/K)) of commercial DSSC glass panels. Based on the results, the studied glass systems are considered to be suitable for laser sealing using fiber types of sealant.

RF MEMS Switch Fabrication and Packaging

RF (Radio Frequency) MEMS (Micro Electro Mechanical Systems) technology is the application of micromachined mechanical structures, controlled by electrical signals and interacting with signals in the RF range. The applications of these devices range from switching networks for satellite communication systems to high performance resonators and tuners. RF MEMS switches are the first and foremost MEMS devices designed for RF technology. A specialized method for fabricating microsturctures called surface micromachining process is used for fabricating the RF MEMS switches. Die level packaging using available surface mount style RF packages. The packaging process involved the design of RF feed throughs on the Alumina substrates to the die attachment, wire bonding and hermetic sealing using low temperature processes.

Wafer-Level Vacuum-Packaged Translatory MEMS Actuator with Large Stroke for NIR-FT Spectrometers

We present a wafer-level vacuum-packaged (WLVP) translatory micro-electro-mechanical system (MEMS) actuator developed for a compact near-infrared-Fourier transform spectrometer (NIR-FTS) with 800–2500 nm spectral bandwidth and signal-nose-ratio (SNR) > 1000 in the smaller bandwidth range (1200–2500 nm) for 1 s measuring time. Although monolithic, highly miniaturized MEMS NIR-FTSs exist today, we follow a classical optical FT instrumentation using a resonant MEMS mirror of 5 mm diameter with precise out-of-plane translatory oscillation for optical path-length modulation. Compared to highly miniaturized MEMS NIR-FTS, the present concept features higher optical throughput and resolution, as well as mechanical robustness and insensitivity to vibration and mechanical shock, compared to conventional FTS mirror drives. The large-stroke MEMS design uses a fully symmetrical four-pantograph suspension, avoiding problems with tilting and parasitic modes. Due to significant gas damping, a permanent vacuum of ≤3.21 Pa is required. Therefore, an MEMS design with WLVP optimization for the NIR spectral range with minimized static and dynamic mirror deformation of ≤100 nm was developed. For hermetic sealing, glass-frit bonding at elevated process temperatures of 430–440 °C was used to ensure compatibility with a qualified MEMS processes. Finally, a WLVP MEMS with a vacuum pressure of ≤0.15 Pa and Q ≥ 38,600 was realized, resulting in a stroke of 700 µm at 267 Hz for driving at 4 V in parametric resonance. The long-term stability of the 0.2 Pa interior vacuum was successfully tested using a Ne fine-leakage test and resulted in an estimated lifetime of >10 years. This meets the requirements of a compact NIR-FTS.