Influence of the pumping wavelength on laser properties of Fe2+ ions in ZnSe crystal

2019 ◽  
Vol 44 (7) ◽  
pp. 1686 ◽  
Author(s):  
Maxim E. Doroshenko ◽  
Helena Jelínková ◽  
Michal Jelínek ◽  
David Vyhlídal ◽  
Jan Šulc ◽  
...  
Keyword(s):  
Znse Crystal

Cw-pumped erbium-doped fiber laser passively Q switched with Co^2+:ZnSe crystal: modeling and experimental study

2002 ◽  
Vol 19 (3) ◽  
pp. 353 ◽  
Author(s):  
Alexander V. Kir’yanov ◽  
Valery N. Filippov ◽  
Andrei N. Starodumov
Keyword(s):  
Experimental Study ◽  
Fiber Laser ◽  
Znse Crystal ◽  
Erbium Doped

Correlation between ZnSe Crystal Growth Conditions from Melt and Generation of Large-Angle Grain Boundaries and Twins

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1991-1994 ◽  
Author(s):  
Peter Rudolph ◽  
Kazuyuki Umetsu ◽  
Han Jun Koh ◽  
Tsuguo Fukuda
Keyword(s):  
Crystal Growth ◽  
Grain Boundaries ◽  
Large Angle ◽  
Growth Conditions ◽  
Znse Crystal

Interface Formation and the Heteroepitaxy of ZnSe on Si.

1990 ◽  
Vol 198 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
L.-E. Swartz ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Bulk Material ◽  
Znse Crystal ◽  
Si Substrate ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Substrate Temperatures

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The growth has been carried out for raised substrate temperatures and also at room temperature followed by solid-phase epitaxial (SPE) regrowth. The ZnSe films have been characterized by a number of surface-sensitive techniques and both the interface and the bulk material have been examined with high resolution transmission electron microscopy (HRTEM). We find that an interlayer, which is most likely SiSex, is present between the ZnSe film and the Si substrate for growths made at 300 °C and causes loss of epitaxy. In the case of room temperature deposition and SPE, it is absent, leading to good epitaxy. In the latter situation, the films are very uniform and there is a 4° rotation of the ZnSe crystal axes relative to those of the Si substrate.

PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers

2003 ◽  
Vol 251 (1-4) ◽  
pp. 576-580 ◽  
Author(s):  
Yoh Mita ◽  
Ryoichi Kuronuma ◽  
Shoichiro Sasaki ◽  
Masanori Inoue ◽  
Susumu Maruyama
Keyword(s):  
Znse Crystal
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