scholarly journals Optical properties of wide-band-gap chalcopyrite CuAl(Se_05S_05)_2 evaluated by thermoreflectance spectroscopy

2013 ◽  
Vol 3 (4) ◽  
pp. 480 ◽  
Author(s):  
Ching-Hwa Ho ◽  
Chia-Chi Pan
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals The influence of calcination temperature on structural and optical properties of ZnO nanoparticles via simple polymer synthesis route

2017 ◽  
Vol 49 (3) ◽  
pp. 263-275 ◽  
Author(s):  
Ibrahim Alibe ◽  
Amin Matori ◽  
Elias Saion ◽  
Alibe Ali ◽  
Mohd Zaid
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Calcination Temperature ◽  
Wide Band ◽  
Polymer Synthesis ◽  
Structural And Optical Properties ◽  
Zno Nps ◽  
Wide Band Gap ◽  
Hexagonal Shape ◽  
Particle Size Increase

A simple polymer synthesis was used to successfully synthesized Zinc Oxide Nanoparticles (ZnO NPs), and the influence of the different calcination temperature on the structural, and optical properties of the material was observed using several techniques. The formation of ZnO NPs was confirmed by FT?IR, EDX, XRD, FESEM and TEM images upon calcination from 500?750?C. The FESEM images showed the ZNO NPs synthesized possessed a hexagonal shape and tended to become larger at higher calcination temperature. The XRD and FTIR revealed the precursor to be amorphous at room temperature but transform to a crystalline structure during the process of calcination. The crystalline and particle size increase as the temperature was increased. The crystalline size was between 24?49 nm for all samples calcined at 500?750?C. The optical properties obtained by UV?vis reflectance spectrometer have further confirmed the formation of ZnO NPs. The band gap exhibits typical ZnO wide band gap, and the values decrease with an increase in calcination temperature.

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

Microstructural and optical properties of nanocrystalline MgS thin film as wide band gap barrier material

2014 ◽  
Vol 118 (2) ◽  
pp. 539-545 ◽  
Author(s):  
B. A. Taleatu ◽  
E. Omotoso ◽  
E. A. A. Arbab ◽  
R. A. Lasisi ◽  
W. O. Makinde ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Barrier Material

Optical Properties of II-IV-N2 Semiconductors

2004 ◽  
Vol 831 ◽  
Author(s):  
John Muth ◽  
Ailing Cai ◽  
Andrei Osinsky ◽  
Henry Everitt ◽  
Ben Cook ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Optical Loss ◽  
Wide Band ◽  
Refractive Indices ◽  
Bulk Crystals ◽  
Wide Band Gap ◽  
Optical Effects ◽  
Transmission Studies ◽  
Novel Devices

ABSTRACTRecently, wide band gap II-IV-N2 semiconductors such as ZnSiN2, and ZnGeN2 and ZnSiGeN2 have been synthesized, but very little is known about their band structure, optical properties, or electronic properties. Bulk crystals are hard to synthesize because high temperatures and pressures are required. The success in growing II-IV-N2 films epitaxially by MOCVD creates interesting opportunities. The crystal structure of II-IV-N2 compounds is orthorhombic, and when grown on r-plane sapphire can provide a suitable template for GaN growth. Optical transmission studies of the band edge of ZnSiN2 and ZnSiGeN2 with varying Si and Ge percentages were conducted. The indirect nature of the band gap was investigated, and prism coupling was used to obtain the refractive indices in the visible and NIR portion of the spectrum. Although the crystal symmetry was orthorhombic, the refractive indices indicated uniaxial optical properties. Optical loss measurements indicate that the films are suitable for waveguides and novel devices based on birefringent optical effects.

Zn1−yCdySe1−xTexquaternary wide band‐gap alloys: Molecular beam epitaxial growth and optical properties

1991 ◽  
Vol 59 (10) ◽  
pp. 1206-1208 ◽  
Author(s):  
Maria J. S. P. Brasil ◽  
Maria C. Tamargo ◽  
R. E. Nahory ◽  
H. L. Gilchrist ◽  
R. J. Martin
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Wide Band ◽  
Wide Band Gap ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-x

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L555-L557 ◽  
Author(s):  
Yi-hong Wu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Single Quantum ◽  
Wide Band Gap ◽  
Strained Layer

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Meili Guo ◽  
Xiaodong Zhang ◽  
Hongen Gu ◽  
Na Wang
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Constants ◽  
Wide Band ◽  
Low Energy ◽  
Experimental Result ◽  
First Principle ◽  
Wide Band Gap ◽  
Electronic And Optical Properties

AbstractWe present a first-principle study of electronic and optical properties in pure LiF and O-doped LiF crystals. The pure LiF crystal exhibits a wide band gap while the O-doped LiF crystal shows the less band gap due to the contribution of O 2p. Some optical constants, such as dielectric functions, reflectivity and the refractive index, have been performed. The calculated reflectivity and refractive index from the pure LiF crystal agree with the experimental and recently calculated results in the low-energy range. Meanwhile, the optical properties have also been predicted from the O-doped LiF crystal. The absorption band in 200 nm has been observed, which is relatively close to the experimental result.

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