Spectroscopic investigation of photovoltaic effect and photoconductivity in undoped and Mg-doped near-stoichiometric LiTaO3 crystals

2005 ◽  
Author(s):  
Youwen Liu ◽  
Kenji Kitamura ◽  
Shunji Takekawa ◽  
Masaru Nakamura ◽  
Yasunori Furukawa ◽  
...  
Keyword(s):  
Spectroscopic Investigation ◽  
Photovoltaic Effect ◽  
Mg Doped

Some Results of the Spectroscopic Study of Four Close Binary Systems of Early Spectral Types

1965 ◽  
Vol 5 ◽  
pp. 120-130
Author(s):  
T. S. Galkina
Keyword(s):  
Spectroscopic Study ◽  
Spectral Type ◽  
Spectroscopic Investigation ◽  
Binary Systems ◽  
Quantitative Information ◽  
Close Binary ◽  
Physical Parameters ◽  
Absorption And Emission ◽  
Close Binary Systems ◽  
Quantitative Estimates

It is necessary to have quantitative estimates of the intensity of lines (both absorption and emission) to obtain the physical parameters of the atmosphere of components.Some years ago at the Crimean observatory we began the spectroscopic investigation of close binary systems of the early spectral type with components WR, Of, O, B to try and obtain more quantitative information from the study of the spectra of the components.

SPECTROSCOPIC INVESTIGATION OF THE SUBBAND EDGE RENORMALIZATION IN ELECTRON-HOLE PLASMAS IN GaAs/GaAlAs QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-403-C5-406
Author(s):  
E. LACH ◽  
G. TRÄNKLE ◽  
A. FORCHEL ◽  
G. WEIMANN
Keyword(s):  
Quantum Wells ◽  
Spectroscopic Investigation ◽  
Electron Hole

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI
Keyword(s):  
Photovoltaic Effect ◽  
Experimental Investigations ◽  
Semiconductor Superlattices

SPECTROSCOPIC INVESTIGATION OF SOLID ROCKET SIGNATURES

1997 ◽  
Vol 4 (1-6) ◽  
pp. 927-933
Author(s):  
Wilhelm Eckl ◽  
W. Liehmann ◽  
Norbert Eisenreich ◽  
M. Weindel ◽  
L. Deimling
Keyword(s):  
Spectroscopic Investigation ◽  
Solid Rocket

Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

2017 ◽  
Author(s):  
C.Q. Chen ◽  
P.T. Ng ◽  
G.B. Ang ◽  
Francis Rivai ◽  
S.L. Ting ◽  
...  
Keyword(s):  
Image Analysis ◽  
Failure Analysis ◽  
Photovoltaic Effect ◽  
Electrical Characterization ◽  
Fault Isolation ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Current Image ◽  
Scaling Down ◽  
Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

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