AbstractThe thin film formation process was studied by the molecular dynamics(MD) method and by the hybrid method which combined the MD method with the Monte Carlo(MC) simulation technique. The Morse potential was assumed as the atomic interaction model. The substrate temperature was changed to see its effect on the film structure. The MD simulation found that the reconstruction process of the deposited nuclei was essential to determine the metastable film structure and that the relaxed atomic arrangements were strongly dependent on the depth of the interaction potentials. The hybrid method simulated the high rate deposition process and confirmed the results of the MD simulation.
Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas