Thin Film Deposition of PECVD Hydrogenated Nano-Crystalline Silicon (nc-Si:H) for Solar Cell Applications

2018 ◽  
Author(s):  
Moniruzzaman Syed
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Nano Crystalline

scholarly journals A review on Spray pyrolysis deposited CZTS thin films for solar cell applications

2021 ◽  
Vol 23 (09) ◽  
pp. 1196-1206
Author(s):  
C.S.A. Raj ◽  
◽  
S. Sebastian ◽  
Susai Rajendran ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Research Area ◽  
Film Deposition ◽  
Deposition Technique ◽  
Czts Thin Films

Cu2ZnSnS4 generally abridged as CZTS is a potential material for economical thin film solar cells, due to its appropriate band gap energy of around 1.5 eV and great absorption coefficient of above 104 cm-1. All the constituents of this material are plentiful in the earth’s crust, and they are non-hazardous making it an elegant alternative. Subsequent to the early achievement of the CZTS based solar cell with its light to electrical conversion efficiency of 0.6%, significant advancement in this research area has been attained, particularly in the last seven years. Currently, the conversion effectiveness of the CZTS thin film solar cell has enhanced to 24%. More than 500 papers on CZTS have been available and the greater part of these converses the preparation of CZTS thin films by diverse methods. Until now, many physical and chemical methods have been engaged for preparing CZTS thin films. Amongst them, spray pyrolysis is a flexible deposition technique. Spray pyrolysis is a simple deposition technique that finds use in widespread areas of thin film deposition research. This method is appropriate for depositing good quality films with low cost, clean deposition, and simplicity and flexibility in the manufacturing design. This script, reviews the synthesis of CZTS semiconductor thin films deposited by spray pyrolysis. This analysis initiates with a portrayal of the spray pyrolysis system, and then establish the CZTS and preparation of the CZTS precursor for coating. A review of spray pyrolysis of CZTS thin films are discussed in detail. To conclude, we present perspectives for advancements in spray pyrolysis for a CZTS based solar cell absorber layer.

Characterization of CIGS Thin Films Fabricated from Nanoparticles under Selenization Process

2013 ◽  
Vol 829 ◽  
pp. 357-361
Author(s):  
Hadi Zarei ◽  
Rasoul Malekfar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spin Coating ◽  
High Efficiency ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Synthesis Process ◽  
Solar Cell Application ◽  
Cigs Nanoparticles

In the present report, the synthesis process of CuInxGa1-xSe2 nanoparticles as an absorption layer in tetraethylene glycol using metallic chloride and Se powder for the purpose of solar cell application. Whole processes were performed under glovebox condition. Nanoparticles sizes were achieved via manipulation of reaction temperature and various precursor concentrations. CuInxGa1-xSe2 or CIGS nanoparticles with diameters in the range of about 20-50 nm were prepared via polyol route and purified through centrifugation and precipitation processes. Then nanoparticles were dispersed to obtain stable inks that could be directly used for thin-film deposition via spin coating. Then, CIGS nanoparticles were coated on soda lime glass for fabrication of inorganic thin film solar cell via spin coating as a film. In those devices, the prepared films yielded relatively dense CuInGaSe2 films with some void spaces. For elimination of the void spaces, the nanocrystals were exposed to selenium vapor atmosphere. Filling the voids with selenium can lead to the fabrication of CIGS absorptive layers having good dense structures and high efficiency. CIGS thin films were characterized by various analytical tools, such as XRD, UV-Visible spectroscopy and SEM imaging.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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