Numerical Determination of Schottky Barrier Height of Nickel/n-Type Gallium Nitride Diodes Formed on Free-standing Substrates

2014 ◽  
Vol 3 (2) ◽  
pp. 29 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Akihisa Terano ◽  
Takashi Ishigaki ◽  
Tomonobu Tsuchiya ◽  
Tomoyoshi Mishima ◽  
...  
2011 ◽  
Vol 109 (7) ◽  
pp. 073714 ◽  
Author(s):  
V. G. Bozhkov ◽  
N. A. Torkhov ◽  
A. V. Shmargunov

2017 ◽  
Vol 5 (40) ◽  
pp. 10509-10516 ◽  
Author(s):  
Muhammad Shahid Arshad ◽  
Špela Trafela ◽  
Kristina Žužek Rožman ◽  
Janez Kovač ◽  
Petar Djinović ◽  
...  

We have determined the Schottky barrier height (0.23 eV) and efficient photoelectron generation in novel multisegmented Au/TiO2 nanorod arrays.


2010 ◽  
Vol 97 (23) ◽  
pp. 232104 ◽  
Author(s):  
T. Jaouen ◽  
G. Jézéquel ◽  
G. Delhaye ◽  
B. Lépine ◽  
P. Turban ◽  
...  

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