Random dopant fluctuations impact reduction in 7 nm bulk-FinFET by substrate engineering
2019 ◽
Vol 59
(4)
◽
pp. 339
◽
2019 ◽
Vol 59
(4)
◽
pp. 339
Keyword(s):
2008 ◽
Vol 7
(3)
◽
pp. 291-298
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2020 ◽
Vol 67
(4)
◽
pp. 1485-1491
◽
2016 ◽
Vol 37
(8)
◽
pp. 958-961
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Keyword(s):