scholarly journals Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

2015 ◽  
Vol 33 (1) ◽  
pp. 137-143 ◽  
Author(s):  
Ştefan Ţǎlu ◽  
Sebastian Stach ◽  
Shahoo Valedbagi ◽  
S. Mohammad Elahi ◽  
Reza Bavadi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Titanium Nitride ◽  
Fractal Analysis ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films

AbstractIn this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN) thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100) wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K) in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM) and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K) to 2.66 (at 673 K) and then decreased to 2.33 (at 773 K). The fractal analysis in correlation with the averaged power spectral density (surface) yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

The Influence of N2 Partial Pressure on Color, Mechanical, and Corrosion Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

2015 ◽  
Vol 659 ◽  
pp. 550-554
Author(s):  
Pisitpat Nimnual ◽  
Aparporn Sakulkalavek ◽  
Rachsak Sakdanuphab
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Corrosion Properties ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films ◽  
Mechanical And Corrosion Properties

Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3x3 cm2 Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N2 partial pressure (PN2) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N2 partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N2 partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (icorr) in the range between 0.25 to 4.25 mA/cm2 and the polarization resistance increases with increasing of N2 partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N2 partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application.

Influence of Annealing Temperature on Microstructural and Optical Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

2013 ◽  
Vol 770 ◽  
pp. 197-200
Author(s):  
T. Rattana ◽  
N. Witit-Anun ◽  
S. Suwanboon ◽  
S. Chaiyakun
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Annealing Temperatures ◽  
Dc Reactive Magnetron Sputtering ◽  
Spherical Structures ◽  
Tin Thin Films

Polycrystalline TiN thin films were deposited on silicon and quartz substrates by DC reactive magnetron sputtering technique. The as-prepared thin films were annealed in air at various temperatures ranging between 400 °C to 700 °C. The effect of annealing temperatures on the microstructural and optical properties have been investigated by field emission scanning electron microscope, Raman scattering spectroscopy and UVVis spectrophotometer, respectively. The raman results indicated the presence of the rutile TiO2 phase for the samples annealed above 500°C. Many hollow-spherical structures appeared on the surface of films annealed at about 600 °C and the hollow-spherical structures occurred increasingly as a function of annealing temperatures. In addition, the optical properties of thin films depended strongly on annealing temperature.

Effects of Ce Doping on the Properties of ZnO Thin Films Prepared by DC Reactive Magnetron Sputtering

2012 ◽  
Vol 476-478 ◽  
pp. 2403-2406 ◽  
Author(s):  
Qing Luo ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
Yuan Zhi Chen ◽  
Guang Hui Yue ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Reactive Magnetron Sputtering ◽  
Zno Thin Films ◽  
Reactive Magnetron ◽  
Photoluminescence Properties ◽  
Dc Reactive Magnetron Sputtering

The ZnO and ZnO:Ce thin films were prepared by DC reactive magnetron sputtering. The structure, surface morphology, optical and photoluminescence properties of ZnO:Ce thin films were investigated. The XRD results indicated that all the samples exhibited a hexagonal wurtzite structure. The surface morphology of the films was sensitive to the Ce concentration. All the films had a higher average transmittance (more than 85%) in the visible region and a strong absorption near the band-edge of ZnO. The photoluminescence properties of the Ce-doped ZnO thin films were also studied. Blue emissions were observed from the ZnO:Ce thin films. Our results indicated that the photoluminescence properties of ZnO thin films doped with low Ce concentration were related to the intrinsic transition of Ce3+ ions. However, when the Ce concentration increased, Zni also played an important role.

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