Effect of Doping Concentration on Zn1-XMnxO Thin Films Grown by RF Magnetron Sputtering

2008 ◽  
Vol 63 (9) ◽  
pp. 585-590
Author(s):  
Jayaraman Elanchezhiyan ◽  
Periyasamy Bhuvana ◽  
Nammalvar Gopalakrishnan ◽  
Arumugam Thamizhavel ◽  
Thailampillai Balasubramanian
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Quantum Interference ◽  
Doping Concentration ◽  
Deep Level ◽  
Rf Magnetron Sputtering ◽  
Near Band Edge ◽  
Paramagnetic Behaviour ◽  
Mn Doped ◽  
Effect Of Doping

We have investigated the effect of doping concentration on structural, optical and magnetic properties of Mn-doped ZnO thin films deposited on Si (100) substrate by RF magnetron sputtering. The films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and superconducting quantum interference device (SQUID) magnetometry. It is observed from XRD, that the increase of Mn content increases the FWHM which indicates the degradation of crystalline quality. The photoluminescence spectrum reveals that the incorporation of Mn ions suppresses the deep level emissions considerably in comparison to those observed in pure ZnO. The near band edge (NBE) emission of Mn-doped films is shifted to the lower energy side (red shift) in comparison to pure ZnO film. The room temperature SQUID magnetometer results reveal that all the films show paramagnetic behaviour due to the lack of interactions among Mn moments.

The Optical and Crystalline Structure Properties of ZnO Thin Films Grown by Rf Magnetron Sputtering

1999 ◽  
Vol 560 ◽  
Author(s):  
K. K. Kim ◽  
S. J. Park ◽  
J.H. Song ◽  
J.-H. Song ◽  
H.-J. Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Deep Level ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Rf Power ◽  
Rocking Curve

ABSTRACTZnO thin films were epitaxially grown on A12O3 (0001) single crystalline substrate by RF magnetron sputtering. The films were grown at the substrate temperature of 550°C and 600°C for 1 h and at a power of 60–120 W. The crystalline structure of the ZnO films was analyzed by 4-circle X-ray diffraction and backscattering (BS)/channeling. The FWHM of XRD ø -rocking curve increase from 9.45 to 18 arc-min. as the RF power increased from 80 to 120 W at 550°C. In-plane ZnO growth on sapphire.(0001) substrate at 550°C and at 80 W was found to be ZnO [1010] |: A12O3[1120], indicating a 30° rotation of ZnO unit cell about the sapphire (0001) substrate. For a specimen that was grown at an RF power of 120 W, 550°C, 1 h, the FWHM of XRD ø -rocking curve was 7.79 arc-min. In BS/channeling studies, the films deposited at 120 W, 600°C showed good crystallinity with the channeling yield minimum (Xmin) of only 5%, but for films deposited at 550°C the yield was as high as 50-60%, was of lower crystalline qualilty. From the results of the AFM measurement, the grain size gradually increased as the growing temperature and power increased. In case of the film deposited at 120 W and 600°C. the hexagonal shape of the grains were clearly observed. In PL measurement, only the sharp near band edge (NBE) emission were observed at room temperature for the film deposited at 80-120 W and 550°C, but the emission from deep level were also detected in the films deposited at 60 W, 550°C and 120 W, 600°C. The FWFM was decreased from 133 meV to 89 meV as RF power increased from 80 to 120 W at 550°C, and that of film deposited at 120 W and 600°C showed 98 meV respectively. The results were somewhat opposite to those of XRD. In the present study, the relationship between optical properties and crystal structure is discussed in terms of the quality of grains and the defects.

Mn-doped Cu2O thin films grown by rf magnetron sputtering

2005 ◽  
Vol 97 (10) ◽  
pp. 10D318 ◽  
Author(s):  
Liqing Pan ◽  
Hao Zhu ◽  
Chongfei Fan ◽  
Weigang Wang ◽  
Yue Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Cu2o Thin Films ◽  
Mn Doped

Fabrication and characterization of Mn-doped Cu2O thin films grown by RF magnetron sputtering

2008 ◽  
Vol 320 (23) ◽  
pp. 3303-3306 ◽  
Author(s):  
Yaping Zhang ◽  
Liqing Pan ◽  
Hao Zhu ◽  
Hongmei Qiu ◽  
Jinghua Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Cu2o Thin Films ◽  
Fabrication And Characterization ◽  
Mn Doped

Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering

2008 ◽  
Vol 62 (19) ◽  
pp. 3379-3381 ◽  
Author(s):  
J. Elanchezhiyan ◽  
K.P. Bhuvana ◽  
N. Gopalakrishnan ◽  
T. Balasubramanian
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Effect of In Doping on Thermoelectric and Magnetoresistive Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 185 ◽  
pp. 37-43
Author(s):  
Liang Fang ◽  
H.B. Ruan ◽  
L.P. Peng ◽  
X.F. Yang ◽  
F. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Doping Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Absolute Value ◽  
In Doping ◽  
Structure Surface ◽  
Magnetoresistive Effect

n-doped ZnO (ZnO:In) thin films with 0~9at.% In content have been prepared by RF high magnetron sputtering on glass substrate. All the films were annealed in N2at 473K for 1h. The effect of In doping concentration on the structure, surface morphology, electrical properties,Seebeck and magnetoresistive effect of the films were investigated. It was found that the crystal quality of the films degrades, and the surface gets rough with increasing In content. The lowest resistivity of the ZnO:In thin films 6.1×10-4Ω.cm occurs at 5at.% in the target doping concentration. All the films show a striking Seebeck effect and the absolute value of the Seebeck coefficient decreases under magnetic field. Meanwhile, a positive magnetoresistance of the films was found. ZnO thin films with 1at.% In-doped is best for the thermoelectric material, which has the largest power factor of 2.1×10-4W/K2m at room temperature.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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