Ternary Indides LnRhIn2 (Ln = La, Ce, Pr, Nd, Sm) with MgCuAl2 Type Structure

2002 ◽  
Vol 57 (7) ◽  
pp. 798-802 ◽  
Author(s):  
Vasyl’ I Zaremba ◽  
Vitaliy P Dubenskiy ◽  
Rainer Pöttgena
Keyword(s):  
Single Crystals ◽  
Three Dimensional ◽  
Argon Atmosphere ◽  
Type Structure ◽  
Subsequent Annealing ◽  
X Ray Diffraction ◽  
Interatomic Distances ◽  
X Ray ◽  
Arc Melting ◽  
Trigonal Prisms

The ternary indides LnRhIn2 (Ln = La, Ce, Pr, Nd, Sm) were synthesized by arc-melting of the elements under an argon atmosphere and subsequent annealing at 870 K. The samples have been investigated by X-ray diffraction on powders and single crystals: MgCuAl2 type, Cmcm, a = 448.2(1), b = 1025.7(1), c = 795.1(1) pm, wR2 = 0.0372, 228 F2 values, 16 variables for LaRhIn2, a = 446.0(1), b = 1017.3(2), c = 792.7(1) pm for CeRhIn2, a = 444.03(6), b = 1013.1(1), c = 792.5(1) pm for PrRhIn2, a = 442.49(5), b = 1012.7(1), c = 789.3(1) pm for NdRhIn2, and a = 438.1(1), b = 1009.3(1), c = 788.3(1) pm, wR2= 0.0414, 304 F2 values, 16 variables for SmRhIn2. Geometrical motifs of these structures are tricapped trigonal prisms around the rhodium atoms. The shortest interatomic distances were observed for the Rh-In contacts: 280-282 pm for LaRhIn2 and 276-279 pm for SmRhIn2. Together, the rhodium and indium atoms build a three-dimensional [RhIn2] polyanion in which the lanthanoid atoms fill distorted pentagonal channels. According to one short La-Rh (282 pm) and Sm-Rh (284 pm) distance one can assume strong bonding of the lanthanoid atoms to the polyanion.

Structure Refinement of CePtSi and Hydrogenation Behavior of CePdGe, CePtSi and CePtGe

2007 ◽  
Vol 62 (4) ◽  
pp. 613-616 ◽  
Author(s):  
Wilfried Hermes ◽  
Ute Ch. Rodewald ◽  
Bernard Chevalier ◽  
Rainer Pötgena
Keyword(s):  
Single Crystal ◽  
Diffraction Data ◽  
Structure Refinement ◽  
Three Dimensional ◽  
Subsequent Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydride Formation ◽  
Arc Melting ◽  
Cerium Compounds

The intermetallic cerium compounds CePdGe, CePtSi, and CePtGe were synthesized from the elements by arc-melting and subsequent annealing. The structure of CePtSi was refined from single crystal X-ray diffraction data: LaPtSi-type (ordered α-ThSi2 version), 141md, a = 419.6(1) and c = 1450.0(5) pm, wR2 = 0.0490, 362 F2 values and 16 variables. The Pt-Si distances within the three-dimensional [PtSi] network are 242 pm, indicating strong Pt-Si interactions. Hydrogenation of the three compounds at 623 K and 4 MPa H2 gave no indication for hydride formation.

Transition Metal-Gallium Ordering In HfCoGa2 And HfNiGa2

2003 ◽  
Vol 58 (1) ◽  
pp. 16-21 ◽  
Author(s):  
Martin Schlüter ◽  
Birgit Heying ◽  
Rainer Pöttgen
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Crystal Chemistry ◽  
Glassy Carbon ◽  
Previous Investigation ◽  
Subsequent Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arc Melting

Abstract The gallides HfCoGa2 and HfNiGa2 were synthesized by arc-melting of the elements and subsequent annealing in glassy carbon crucibles. Their structures have been reinvestigated by X-ray diffraction on powders and single crystals: I4mm, a = 1222.4(1), c = 812.0(1) pm, wR2 = 0.0766, 1464 F2 values, 64 variables, BASF = 0.41(2) for HfCoGa2 and a = 1224.0(2), c = 809.3(2) pm, wR2 = 0.0609, 1499 F2 values, 63 variables for HfNiGa2. In contrast to a previous investigation (Dopov. Akad. Nauk Ukr. RSR, Ser. A, 51 (1988)) we observe a fully ordered arrangement of the transition metal and gallium atoms. The crystal chemistry of these gallides is briefly discussed.

The Stannides EuPdSn and EuPtSn

1996 ◽  
Vol 51 (6) ◽  
pp. 806-810 ◽  
Author(s):  
Rainer Pöttgen
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Crystal Chemistry ◽  
Three Dimensional ◽  
Type Structure ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray

Abstract EuPdSn and EuPtSn were prepared from the elements in tantalum tubes at 1070 K and investigated by X-ray diffraction on both powder as well as single crystals. They crystallize with the TiNiSi type structure of space group Pnma and with Z = 4 formula units per cell. Both structures were refined from single-crystal diffractometer data: a = 751.24(9), b = 469.15(6), c = 804.31(9) pm, V = 0.2835(1) nm3 for EuPdSn, and a = 753.38(7), b = 467.72(4), c = 793.08(7) pm, V = 0.2795(1) nnr for EuPtSn. The structures consist of three-dimensional [PdSn] and [PtSn] polyanionic networks in which the europium atoms are embedded. The crystal chemistry of these stannides is briefly discussed

ScPtP und LaPtP – Zwei Phosphide mit ,,inverser“ TiNiSi-Struktur / ScPtP and LaPtP – Two Phosphides with “Inverse” TiNiSi-Type Structure

2007 ◽  
Vol 62 (9) ◽  
pp. 1153-1156 ◽  
Author(s):  
Anette Imre ◽  
Albrecht Mewis
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Crystal Structures ◽  
Type Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molten Lead ◽  
Trigonal Prisms

Single crystals of ScPtP (orthorhombic, a = 6.437(1), b = 4.291(1), c = 7.550(2) Å ) were grown by reaction of the elements in molten lead (1000 °C), whereas LaPtP (orthorhombic, a = 7.268(1), b = 4.532(1), c = 7.864(2) Å ) was prepared by heating mixtures of the elements at 900 °C. Both phosphides were investigated by single crystal X-ray diffraction. Their crystal structures belong to the TiNiSi-type (Pnma; Z = 4), but the positions of the Ni and Si atoms are exchanged. Therefore the Pt atoms are located in the centers of trigonal prisms and the P atoms are coordinated by four Pt atoms in the shape of distorted tetrahedra.

The Stannide Zr5CuSn3

1997 ◽  
Vol 52 (1) ◽  
pp. 141-144 ◽  
Author(s):  
Rainer Pöttgen
Keyword(s):  
Crystal Structure ◽  
Single Crystals ◽  
Melting Furnace ◽  
Type Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arc Melting

Zr5CuSn3 was prepared from the elements in an arc-melting furnace and investigated by X-ray diffraction of powders as well as of single crystals. The crystal structure was refined from four-circle diffractometer data: P63/mcm, a = 860.04(7) pm, c = 586.80(5) pm, V = 0.3759(1) nm3, Z = 2, wR2 = 0.0402 for 371 F2 values and 15 variables. A refinement of the occupancy parameters re­vealed that the copper position is occupied to only 95.3(8)% in the crystal used for the X-ray investigation. Zr5CuSn3 crystallizes in the Hf5CuSn3 type structure, a filled variant of the Mn5Si3 type. The main features of the Zr5CuSn3 structure are condensed Zr6 octahedra that are centered by copper atoms

U3TiSb5, U3VSb5, U3CrSb5, and U3MnSb5 with "Anti"-Hf5Sn3Cu Type Structure

1994 ◽  
Vol 49 (6) ◽  
pp. 747-752 ◽  
Author(s):  
Markus Brylak ◽  
Wolfgang Jeitschko
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Type Structure ◽  
Interatomic Distances ◽  
X Ray ◽  
Lattice Constants ◽  
Arc Melting ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Structure Factors

The title compounds have been prepared from the elemental components by arc-melting and subsequent annealing. Single crystals of U3TiSb5 and U3MnSb5 were obtained from a tin flux and their structures were determined from single-crystal X-ray data: P63/mcm, Z = 2; a = 913.9(2), c = 611.2(1) pm, R = 0.011 (233 structure factors, 14 variables) for U3TiSb5 and a = 916.8(2), c = 613.2(1) pm, R = 0.015 (427 structure factors, 14 variables) for U3MnSb5. The lattice constants of the isotypic compounds are: a = 908.2(2), c = 608.3(2) pm for U3VSb5 and a = 911.0(1), c = 611.5(1) pm for U3CrSb5. The structure of these antimonides may be regarded as an “anti”-type structure of Hf5Sn3Cu with the antimony atoms on the hafnium sites, while the positions of the uranium and transition metal atoms correspond to the positions of the tin and copper atoms. A comparison of the interatomic distances of U3TiSb5 with those of U3Sb4, USb2, and a-antimony suggests oxidation numbers according to (U+III)3Ti+IV(Sb1-III)3(Sb2-II)2, where the Sb2 atoms form weakly bonded chains

SrPdGa3 type gallides RERhGa3 with RE=La, Ce and Pr

2020 ◽  
Vol 235 (3) ◽  
pp. 53-57
Author(s):  
Stefan Seidel ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Diffraction Data ◽  
Three Dimensional ◽  
Subsequent Annealing ◽  
Crystal Chemical ◽  
X Ray Diffraction ◽  
Muffle Furnace ◽  
X Ray ◽  
Arc Melting

AbstractThe ternary rare earth gallides RERhGa3 with RE = La, Ce and Pr were synthesized by arc-melting and subsequent annealing in a muffle furnace. The gallides were characterized through Guinier powder patterns and the structure of LaRhGa3 was refined from single-crystal X-ray diffraction data: SrPdGa3 type, Cmcm, a = 639.2(2), b = 1030.9(2), c = 589.3(2) pm, wR2 = 0.0964, 416 F2 values and 19 variables. The rhodium and gallium atoms build up a three-dimensional polyanionic network [RhGa3] which is stabilized through Rh–Ga (245–251 pm) and Ga–Ga (267–295 pm) bonds and filled by the lanthanum atoms. The crystal chemical relationship with the structures of LaRh2Ge2 (ThCr2Si2 type), LaRh2Ga2 (CaBe2Ge2 type) and LaRhGe3 (BaNiSn3 type) is discussed.

scholarly journals Intermetallic REPtZn Compounds with TiNiSi-type Structure

2011 ◽  
Vol 66 (7) ◽  
pp. 671-676 ◽  
Author(s):  
Trinath Mishra ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Coordination Number ◽  
High Frequency ◽  
Three Dimensional ◽  
Type Structure ◽  
Rare Earth Compounds ◽  
Crystal Data ◽  
X Ray Diffraction ◽  
X Ray

The equiatomic rare earth compounds REPtZn (RE = Y, Pr, Nd, Gd-Tm) were synthesized from the elements in sealed tantalum tubes by high-frequency melting at 1500 K followed by annealing at 1120 K and quenching. The samples were characterized by powder X-ray diffraction. The structures of four crystals were refined from single-crystal diffractometer data: TiNiSi type, Pnma, a = 707.1(1), b = 430.0(1), c = 812.4(1) pm, wR2 = 0.066, 602 F2, 21 variables for PrPt1.056Zn0.944; a = 695.2(1), b = 419.9(1), c = 804.8(1) pm, wR2 = 0.041, 522 F2, 21 variables for GdPt0.941Zn1.059; a = 688.2(1), b = 408.1(1), c = 812.5(1) pm, wR2 = 0.041, 497 F2, 22 variables for HoPt1.055Zn0.945; a = 686.9(1), b = 407.8(1), c = 810.4(1) pm, wR2 = 0.061, 779 F2, 20 variables for ErPtZn. The single-crystal data indicate small homogeneity ranges REPt1±xZn1±x. The platinum and zinc atoms build up three-dimensional [PtZn] networks (265 - 269 pm Pt-Zn in ErPtZn) in which the erbium atoms fill cages with coordination number 16 (6 Pt + 6 Zn + 4 Er). Bonding of the erbium atoms to the [PtZn] network proceeds via shorter RE-Pt distances, i. e. 288 - 293 pm in ErPtZn.

scholarly journals CRYSTAL STRUCTURE OF THE NEW SILICIDE Lu3Ni11.74(2)Si4

2020 ◽  
Vol 86 (5) ◽  
pp. 3-12
Author(s):  
Bohdana Belan ◽  
Mykola Manyako ◽  
Mariya Dzevenko ◽  
Dorota Kowalska ◽  
Roman Gladyshevskii
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Type Structure ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
Arc Melting ◽  
Pearson Symbol ◽  
Ternary Silicide

The new ternary silicide Lu3Ni11.74(2)Si4 was synthesized from the elements by arc-melting and its crystal structure was determined by the single-crystal X-ray diffraction. The compound crystallizes in the Sc3Ni11Ge4-type: Pearson symbol hP37.2, space group P63/mmc (No. 194), a = 8.0985(16), c = 8.550(2) Å, Z = 2; R = 0.0244, wR = 0.0430 for 244 reflections. The silicide Lu3Ni11.74(2)Si4 is new member of the EuMg5.2-type structure family.

The solid solution TbNiIn1−x Ga x

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Myroslava Horiacha ◽  
Galyna Nychyporuk ◽  
Rainer Pöttgen ◽  
Vasyl Zaremba
Keyword(s):  
Solid Solution ◽  
Unit Cell ◽  
Type Structure ◽  
X Ray Diffraction ◽  
Unit Cell Parameters ◽  
Space Group ◽  
X Ray ◽  
Cell Parameters ◽  
Structure Space ◽  
Arc Melting

Abstract Phase formation in the solid solution TbNiIn1−x Ga x at 873 K was investigated in the full concentration range by means of powder X-ray diffraction and EDX analysis. The samples were synthesized by arc-melting of the pure metals with subsequent annealing at 873 K for one month. The influence of the substitution of indium by gallium on the type of structure and solubility was studied. The solubility ranges have been determined and changes of the unit cell parameters were calculated on the basis of powder X-ray diffraction data: TbNiIn1–0.4Ga0–0.6 (ZrNiAl-type structure, space group P 6 ‾ 2 m $P‾{6}2m$ , a = 0.74461(8)–0.72711(17) and c = 0.37976(5)–0.37469(8) nm); TbNiIn0.2–0Ga0.8–1.0 (TiNiSi-type structure, space group Pnma, а = 0.68950(11)–0.68830(12), b = 0.43053(9)–0.42974(6), с = 0.74186(10)–0.73486(13) nm). The crystal structures of TbNiGa (TiNiSi type, Pnma, a = 0.69140(5), b = 0.43047(7), c = 0.73553(8) nm, wR2=0.0414, 525 F 2 values, 21 variables), TbNiIn0.83(1)Ga0.17(1) (ZrNiAl type, P 6 ‾ 2 m $P‾{6}2m$ , a = 0.74043(6), c = 0.37789(3) nm, wR2 = 0.0293, 322 F 2 values, 16 variables) and TbNiIn0.12(2)Ga0.88(2) (TiNiSi type, Pnma, a = 0.69124(6), b = 0.43134(9), c = 0.74232(11) nm, wR2 = 0.0495, 516 F 2 values, 21 variables) have been determined. The characteristics of the solid solutions and the variations of the unit cell parameters are briefly discussed.

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