Crystalline Quality and Structure of MBE-Grown Ferromagnetic Semiconductor ZnSnAs2:Mn Thin Films Revealed by High-Resolution X-ray Diffraction Measurements

2016 ◽  
Vol 230 (4) ◽  
Author(s):  
Naotaka Uchitomi ◽  
Hideyuki Toyota ◽  
Toshio Takahashi
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Crystalline Structure ◽  
Ferromagnetic Semiconductor ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray

AbstractThe crystalline structure and quality of ZnSnAs

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

2014 ◽  
Vol 59 (3) ◽  
pp. 315-322 ◽  
Author(s):  
A. E. Blagov ◽  
A. L. Vasiliev ◽  
A. S. Golubeva ◽  
I. A. Ivanov ◽  
O. A. Kondratev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

On influence of collimating slit imperfections on the quality of experimental data in high-resolution x-ray diffraction

2008 ◽  
Vol 372 (13) ◽  
pp. 2155-2158
Author(s):  
Aliaksandr V. Darahanau ◽  
Andrei Y. Nikulin ◽  
Ruben A. Dilanian
Keyword(s):  
Experimental Data ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

scholarly journals Nanocrystalline Hexagonal Shaped CdS Thin Films for Photoconducting Application

2014 ◽  
Vol 36 ◽  
pp. 153-167
Author(s):  
S.M. Patil ◽  
P.H. Pawar
Keyword(s):  
Thin Films ◽  
Cadmium Sulphide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Technique ◽  
Deposition Parameters ◽  
Cds Thin Films ◽  
Response And Recovery ◽  
Nanocrystalline Thin Films

Nanocrystalline thin films of cadmium sulphide were prepared by chemical bath deposition technique onto glass substrate at 60 °C. The deposition parameters were optimized to obtain good quality of nanocrystalline thin films such as, time, precursor concentration, temperature of deposition and pH of the solution. The studies on crystal structure, composition, surface morphology, electrical conductivity and photoconductivity of the films were carried out by using different analytical technique. Characterization includes X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Energy dispersive X-ray analysis (EDAX), Electrical and photoconductivity. The response and recovery time of the thin film were measured and presented.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

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