Strain profiles in yttria stabilized zirconia epitaxial thin films determined by high-resolution X-ray diffraction

2004 ◽  
Vol 450 (1) ◽  
pp. 66-70 ◽  
Author(s):  
A. Boulle ◽  
O. Masson ◽  
R. Guinebretière ◽  
A. Dauger
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Yttria Stabilized Zirconia ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray

Textured Pb(Zr0.54Ti0.46)O3 Thin Films with YBa2Cu3O7-δ and Yttria-Stabilized Zirconia Buffer Layers on (001)Si

1993 ◽  
Vol 310 ◽  
Author(s):  
Tsvetanka Zheleva ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Stabilized Zirconia ◽  
X Ray

AbstractCharacteristics of textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers have been studied using X-ray diffraction and high resolution electron microscopy techniques. Excimer KrF laser has been used for deposition of PZT, YBCO and YSZ thin films. The YBCO layer was utilized to provide a seed for PZT growth, while YSZ layer acted as a seed and a buffer layer for the growth of YBCO on (001)Si. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction were used to determine the texture and the nature of defects, interfaces and grain boundaries. Predominant orientation relationships were found to be [001]PZT//[001]YBCO; [001]YBCO//[001]YSZ; and [001]YSZ//[001]Si.

Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

2020 ◽  
Vol 38 (4A) ◽  
pp. 491-500
Author(s):  
Abeer F. Al-Attar ◽  
Saad B. H. Farid ◽  
Fadhil A. Hashim
Keyword(s):  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Structural Information ◽  
Impedance Analysis ◽  
High Energy ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Powder Morphology ◽  
X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

Effect of Yttria-Stabilized Zirconia Concentration in an Electroless Bath on Microstructure and Composition of Ni/Yttria-Stabilized Zirconia Nanocomposite

2021 ◽  
Vol 21 (11) ◽  
pp. 5592-5602
Author(s):  
Samira Almasi ◽  
Ali Mohammad Rashidi
Keyword(s):  
High Performance ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Nickel Ion ◽  
Nanocomposite Particles ◽  
X Ray ◽  
Ni Content ◽  
Naoh Solution ◽  
Average Size

The effect of the yttria-stabilized zirconia (YSZ) nanoparticle loading in an electro-less bath was considered as one of the vital synthesis variables for control Ni content and microstructure of prepared nanocomposite particles, which are two crucial factors to achieving high-performance SOFC anode. Nanocomposite particles were prepared using a simple electroless method without any expensive pretreatment of sensitizing by Sn2+ ions as well as activating by Pd2+ ions that are usually used to apply nickel coating on the surface of a non-conductive substrate. The process was performed by adding YSZ nanoparticles into NaOH solution, separating them from the solution by the centrifugal method, then providing several water-based nanofluids with different concentrations of activated YSZ nanoparticles, mixing them with NiCI2 solution, followed by adding the hydrazine and then NaOH solution. X-ray diffraction and scanning electron microscopy coupled with energy dispersive X-ray analysis were used to analyze the prepared nanocomposite particles. It is observed that after adding YSZ nanoparticles into the NaOH solution, the pH of the solution varied gradually from a starting pH of 10.2 to 9. Also, by increasing the YSZ nanoparticles loading in the electroless bath from 76 mg/l to 126 mg/l, the grain size of Ni deposits, the Ni content and the average size of the prepared nanocomposite particles decreased. The electrochemical mechanism previously proposed for the nickel ion reduction was modified, and a novel analytical model was proposed for variation of the efficiency of Ni deposition with YSZ nanoparticles loading.

EPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY R.F. MAGNETRON SPUTTERING

1991 ◽  
Vol 05 (27) ◽  
pp. 1829-1835 ◽  
Author(s):  
Q.X. SU ◽  
L. LI ◽  
Y.Y. ZHAO ◽  
Y.Z. ZHANG ◽  
P. XU
Keyword(s):  
Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Processing Conditions ◽  
Full Width ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Si Substrates ◽  
Zirconia Films ◽  
Scanning Electron

Yttria-stabilized Zirconia(YSZ) films were deposited on (100)Si substrates by R.F. magnetron sputtering method. X-ray diffraction analysis showed that the best YSZ films were cubic in structure and was grown epitaxially with (100) orientation. The (200) peak of YSZ films was 0.8° of the full width at half of the maximum, X-ray diffraction based on Seemann-Bohlin focusing geometry showed no peaks. The morphology of the YSZ films was observed by scanning electron microscopy. The effects of the processing conditions (such as substrate temperature, oxygen partial pressure, etc.) on the structure of the film were also discussed.

Convergent-beam parallel detection x-ray diffraction system for characterizing combinatorial epitaxial thin films

2000 ◽  
Author(s):  
Kazuhiko Omote ◽  
T. Kikuchi ◽  
J. Harada ◽  
Masashi Kawasaki ◽  
Akira Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Parallel Detection ◽  
Convergent Beam

Synchrotron radiation study of yttria-stabilized zirconia, Zr0.758Y0.242O1.879

1999 ◽  
Vol 55 (5) ◽  
pp. 726-735 ◽  
Author(s):  
N. Ishizawa ◽  
Y. Matsushima ◽  
M. Hayashi ◽  
M. Ueki
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Yttria Stabilized Zirconia ◽  
Data Sets ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Ideal Position ◽  
Fluorite Type ◽  
The Ideal

The fluorite-related cubic structure of yttria-stabilized zirconia, Zr0.75 8Y0.24 2O1.87 9, has been studied by single-crystal X-ray diffraction using synchrotron radiation and by EXAFS. Two diffraction data sets obtained at X-ray energies of 512 and 10 eV below the Y K edge revealed that in the average structure Zr atoms are displaced from the origin of the space group Fm3¯m along 〈111〉 by 0.19 Å, while Y atoms reside at the origin. Approximately 48% of the O atoms occupy the ideal position in the fluorite-type structure, while 43% of O atoms are displaced from the ideal position along 〈001〉 by 0.31 Å. The remaining 9% of O atoms are presumably sited at interstitial positions. Local structures around Zr and Y are investigated by combining the results of single-crystal X-ray diffraction and EXAFS studies.

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

Fabrication of Porous YSZ from ZnO-YSZ Cermet

2007 ◽  
Vol 124-126 ◽  
pp. 235-238
Author(s):  
Moon Jin Hwang ◽  
Chong Soo Han
Keyword(s):  
Electron Microscope ◽  
Gas Permeability ◽  
Acid Leaching ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Scanning Electron Microscope Image ◽  
X Ray ◽  
Electron Microscope Image ◽  
Scanning Electron

Porous YSZ(8 mol% yttria-stabilized zirconia) was prepared by an acid leaching of ZnO-YSZ composite. The ZnO-YSZ composites were obtained by two different methods, a 1450 °C sintering of the mechanical mixture of ZnO and YSZ powders or a decomposition of Zn(NO3)2 deposited on YSZ and a subsequent sintering. The XRD (X-ray diffraction) pattern of the composite indicated that it was a mixture of ZnO and YSZ even after the sintering. Sharp edge or round edge of YSZ was observed in SEM (Scanning Electron Microscope) image of the porous-YSZ from the mixture of ZnO and YSZ, or Zn(NO3)2 deposited on YSZ, respectively. The porous YSZ from the composite having ZnO component greater than 60 wt% shows low mechanical strength. As the ZnO content of the composite increased, the porosity and gas permeability of the porous YSZ increased. From the result, it was suggested that ZnO is a candidate to generate pores in YSZ bulk or membrane.

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