scholarly journals Nanocrystalline Hexagonal Shaped CdS Thin Films for Photoconducting Application

2014 ◽  
Vol 36 ◽  
pp. 153-167
Author(s):  
S.M. Patil ◽  
P.H. Pawar
Keyword(s):  
Thin Films ◽  
Cadmium Sulphide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Technique ◽  
Deposition Parameters ◽  
Cds Thin Films ◽  
Response And Recovery ◽  
Nanocrystalline Thin Films

Nanocrystalline thin films of cadmium sulphide were prepared by chemical bath deposition technique onto glass substrate at 60 °C. The deposition parameters were optimized to obtain good quality of nanocrystalline thin films such as, time, precursor concentration, temperature of deposition and pH of the solution. The studies on crystal structure, composition, surface morphology, electrical conductivity and photoconductivity of the films were carried out by using different analytical technique. Characterization includes X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Energy dispersive X-ray analysis (EDAX), Electrical and photoconductivity. The response and recovery time of the thin film were measured and presented.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

2012 ◽  
Vol 510-511 ◽  
pp. 156-162 ◽  
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Window Layer ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Cds Thin Film ◽  
Cds Thin Films ◽  
Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy

2007 ◽  
Vol 516 (1) ◽  
pp. 91-98 ◽  
Author(s):  
Shramana Mishra ◽  
Alka Ingale ◽  
U.N. Roy ◽  
Ajay Gupta
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cds Thin Films ◽  
Induced Changes

Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Deposition Time ◽  
Layer Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thiourea Solution ◽  
Cds Thin Films ◽  
Cds Films

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

scholarly journals Kontrol Kualitas Uang Logam Pecahan Rp 1.000,00 dengan Teknik Difraksi Sinar-X (XRD)

2020 ◽  
Vol 42 (1) ◽  
pp. 11
Author(s):  
Ibrahim Purawiardi
Keyword(s):  
Quality Control ◽  
Structural Defect ◽  
Special Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Technique ◽  
Standard Quality ◽  
Production Target

Uang logam pecahan Rp 1.000,00 merupakan salah satu uang dengan nilai intrinsik yang paling baik dan banyak beredar di masyarakat. Oleh karena penggunaannya yang tinggi, maka kualitas uang logam ini perlu diperhatikan. Kontrol kualitas pecahan uang logam ini perlu dilakukan agar pecahan yang beredar di masyarakat adalah pecahan uang logam yang memenuhi standar. Salah satu cara yang dapat dilakukan untuk mengontrol kualitasnya adalah dengan teknik difraksi sinar-x (XRD). Dengan teknik ini, cacat struktur dapat dideteksi tanpa harus merusak uang logamnya, sehingga uang logam yang cacat struktur dapat dieliminasi dari peredaran. Namun, teknik XRD memerlukan cara tersendiri untuk menginterpretasikannya, oleh karena itu studi ini dilakukan untuk mencontohkan bagaimana cara menginterpretasikannya. Lima buah sampel uang logam pecahan Rp 1.000,00 digunakan dalam studi ini, dimana dari hasil kontrol kualitas yang dilakukan, terdapat satu pecahan uang logam yang terdapat cacat struktur. Dari hasil studi sendiri menunjukkan bahwa kelima sampel memiliki karakteristik struktur FCC yang merupakan target produksi dengan indikator bidang-bidang (111), (200), (220) dan (311). Namun, salah satu sampel ternyata memiliki cacat produksi berupa munculnya karakteristik BCC yang bukan merupakan target produksi dengan indikator bidang (310). Sampel yang memiliki cacat produksi ini dapat direkomendasikan untuk tidak diedarkan. Dari studi ini terbukti bahwa teknik analisis XRD dapat digunakan secara efektif untuk mengontrol kualitas uang logam secara non-destruktif. The IDR 1000 coin is one of the best intrinsic rupiah money and most widely used by Indonesian people. Because of these reasons, the quality of it needs to be considered. The quality control of this coin must be done in order to make sure that it meets the standard quality to distribute. An x-ray diffraction (XRD) technique is one way in order to control the quality of this coin. By using this technique, structural defect on this coin can be detected without destructs it, so that defected coin can be rejected to be distributed. However, this technique needs special technique to interpret it. This study aimed to exemplify how to interpret it. Five IDR 1000 coins were used as samples in this study. From this study, the result shows that there is a coin with structural defect. The results of this study show that all of five samples have FCC characteristics as a production target with (111), (200), (220) and (311) planes as indicators. However, there is a sample with a production defect i.e. BCC characteristics with (310) plane as an indicator. This sample were then recommended to be rejected. Overall, this study shows that this XRD analytical technique can be effectively used for controlling the quality of money coin without destructs it.

TEM identification of secondary phases in non-stoichiometric polycrystalline CuInSe2 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 604-605
Author(s):  
J.P. Goral ◽  
M.M. Al-Jassim ◽  
D. Albin ◽  
J.R. Tuttle ◽  
R. Noufi
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Growth Conditions ◽  
Chalcopyrite Structure ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Cationic Sublattice ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Deposition Parameters

Polycrystalline thin films of CuInSe2 and CuGaSe2 are currently being developed as low-cost photovoltaic devices. These films are vacuum-deposited onto molybdenum metallized alumina substrates. The film composition may be varied by manipulation of the deposition parameters. For photovoltaic applications, the desired phase has a stoichiometry close to CuInSe2. This compound is a zincblende variant, the cations and anions occupying separate fcc sublattices. Under certain growth conditions, the Cu and In atoms adopt an ordered configuration within the cationic sublattice resulting in the tetragonal chalcopyrite structure. Even when the deposition parameters are manipulated to produce nominally stoichiometric films, powder x-ray traces often exhibit anomalous peaks indicative of the presence of impurity phases. The identification of these minority phases by x-ray diffraction alone is not possible in this materials system due to low peak intensity and overlap considerations. The formation of the secondary phases has a detrimental effect on the electrical and optical properties of the thin film device.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

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