Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

Domain Structure of Tetragonal Plt Epitaxial Thin Films on Mgo (001) Single Crystal Substrates

1996 ◽  
Vol 433 ◽  
Author(s):  
Y. M. Kang ◽  
J. K. Ku ◽  
S. Baik
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Crystal Quality ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Lattice Constants ◽  
Temperature Lattice

AbstractFerroelectric Pb1−xLaxTiO3 (PLT, x = 0.00 ˜ 0.28) thin films have been prepared on MgO(001) substrates using pulsed laser deposition. The degree of c-axis orientation in PLT films increased as the La concentration (x) increased with systematic changes in lattice constants and transformation strains. For x ≥ 12, the PLT films showed full c-axis orientation.In order to understand why the domain evolution in PLT films changes with the La concentration, we have conducted high temperature X-ray diffraction to simulate the cooling process during which the domain structure is evolved. Lattice constants, degree of c-axis orientation, crystal quality of PLT films were characterized as a function of temperature. Lattice constants along substrate normal direction showed similar characteristics with those of powder. The degree of c-axis orientation just after the phase transformation at the Curie temperature also increased with La concentration. The crystal quality, which is quantified by the line width of diffraction peak, is insensitive to La concentration in paraelectric phase. However, it shows significant variation after the domain structure is evolved.

scholarly journals X-ray diffraction analysis of kaolin M1 and M2 via the Williamson–Hall and Warren–Averbach methods

2021 ◽  
pp. 174751982098472
Author(s):  
Lalmi Khier ◽  
Lakel Abdelghani ◽  
Belahssen Okba ◽  
Djamel Maouche ◽  
Lakel Said
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Diffraction Analysis ◽  
Mechanical Resistance ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Mullite Phase

Kaolin M1 and M2 studied by X-ray diffraction focus on the mullite phase, which is the main phase present in both products. The Williamson–Hall and Warren–Averbach methods for determining the crystallite size and microstrains of integral breadth β are calculated by the FullProf program. The integral breadth ( β) is a mixture resulting from the microstrains and size effect, so this should be taken into account during the calculation. The Williamson–Hall chart determines whether the sample is affected by grain size or microstrain. It appears very clearly that the principal phase of the various sintered kaolins, mullite, is free from internal microstrains. It is the case of the mixtures fritted at low temperature (1200 °C) during 1 h and also the case of the mixtures of the type chamotte cooks with 1350 °C during very long times (several weeks). This result is very significant as it gives an element of explanation to a very significant quality of mullite: its mechanical resistance during uses at high temperature remains.

X-ray diffraction studies elucidating high temperature superconducting properties of YBa2Cu3O7−x thin films

1994 ◽  
Vol 209 (4) ◽  
Author(s):  
M. Schieber ◽  
Y. Ariel ◽  
A. Raizman ◽  
S. Rotter
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Quantitative Evaluation ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Superconducting

AbstractA quantitative evaluation of the influence of the amount of the crystallographically unoriented grains of YBa

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Nanocrystalline Hexagonal Shaped CdS Thin Films for Photoconducting Application

2014 ◽  
Vol 36 ◽  
pp. 153-167
Author(s):  
S.M. Patil ◽  
P.H. Pawar
Keyword(s):  
Thin Films ◽  
Cadmium Sulphide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Technique ◽  
Deposition Parameters ◽  
Cds Thin Films ◽  
Response And Recovery ◽  
Nanocrystalline Thin Films

Nanocrystalline thin films of cadmium sulphide were prepared by chemical bath deposition technique onto glass substrate at 60 °C. The deposition parameters were optimized to obtain good quality of nanocrystalline thin films such as, time, precursor concentration, temperature of deposition and pH of the solution. The studies on crystal structure, composition, surface morphology, electrical conductivity and photoconductivity of the films were carried out by using different analytical technique. Characterization includes X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Energy dispersive X-ray analysis (EDAX), Electrical and photoconductivity. The response and recovery time of the thin film were measured and presented.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

2001 ◽  
Vol 41 (7) ◽  
pp. 995-998 ◽  
Author(s):  
C. Zhao ◽  
G. Roebben ◽  
H. Bender ◽  
E. Young ◽  
S. Haukka ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
X Ray Diffraction ◽  
X Ray

Preparation and Characterization of Al-Mg-B Thin Films by Magnetron Sputtering

2012 ◽  
Vol 465 ◽  
pp. 112-117 ◽  
Author(s):  
Wen Liu ◽  
Qing Sen Meng ◽  
Yang Miao ◽  
Feng Hua Chen ◽  
Li Fang Hu
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Space Applications ◽  
X Ray ◽  
Atomic Force ◽  
Sputtering Power ◽  
Target Power

Hard and superlight thin films laminated with boron carbide have been proposed as candidates for strategic use such as armor materials in military and space applications. We prepared Al-Mg-B films by sputter deposition on Si (100) substrates with one AlMgB14 target. The films were characterized by X-ray diffraction, atomic force microscope, GD-OES spectroscopy. The results show that films of AlMgB with different compositions have been deposited by changing the target power and deposition temperature.The influences of substrate temperature and sputtering power on the quality of the films are discussed.

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

2011 ◽  
Vol 413 ◽  
pp. 11-17 ◽  
Author(s):  
Bin Feng Ding ◽  
Yong Quan Chai
Keyword(s):  
Chemical Vapor ◽  
Crystal Quality ◽  
Tetragonal Distortion ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χmin=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (eT ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

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