Test Method for Deposition Tendencies of Liquids in Thin Films and Vapors

1995 ◽  
Author(s):  
Keyword(s):  
1994 ◽  
Vol 8 (6) ◽  
pp. 635-650 ◽  
Author(s):  
George D. Vaughn ◽  
Bruce G. Frushour ◽  
William C. Dale

Author(s):  
Jiantao Zheng ◽  
Suresh K. Sitaraman

Characterization of interfacial fracture parameters for nano-scale thin films continues to be challenging due to the difficulties associated with preparing samples, fixturing and loading the samples, and extracting and analyzing the experimental data. In this paper, we propose a stress-engineered superlayer test method that can be used to measure the interfacial fracture parameters of nano-scale (as well as micro-scale) thin films without the need for loading fixtures. The proposed test employs the residual stress in sputter-deposited metals to provide the energy for interfacial crack propagation. The innovative aspect of the test is the use of an etchable release layer that is deposited between the two interfacial materials of interest. The release layer is designed such that the available energy for interfacial crack propagation will continue to decrease as the crack propagates, and at the location where the crack ceases to propagate, the available energy for crack propagation will be the critical energy for crack propagation or the interfacial fracture toughness. The proposed test method has been successfully used to characterize Ti thin film on Si substrate.


2006 ◽  
Vol 20 (25n27) ◽  
pp. 4063-4068 ◽  
Author(s):  
SEUNG WOO HAN ◽  
MD ANWARUL HASAN ◽  
KI-HO CHO ◽  
HAK JOO LEE ◽  
DONG-HO KIM ◽  
...  

In this study we have characterized the mechanical and electrical properties of Bi 2 Te 3 thin films prepared by co-sputtering method. The film structure and morphology were revealed using the X-ray diffraction and scanning electron microscopy (SEM). Thickness of the deposited films was measured using SEM observation after FIB (Focused Ion Beam) milling, and the surface roughness of the films was analyzed using AFM (atomic force microscopy). Electrical transport properties were measured with a Hall effect measurement system, while the mechanical properties were evaluated using nanoindentation test method. Results showed that Bi 2 Te 3 thin films have amorphous structure at lower film thicknesses, but as the thickness increases the structure becomes polycrystalline. Surface roughness and crystal size of the films increased with increase in substrate temperature. Films showed higher elastic modulus and hardness values compared to those of the bulk Bi 2 Te 3 alloy. The electrical transport properties of the films were also affected by the substrate temperature.


2013 ◽  
Vol 64 (6) ◽  
pp. 354-360 ◽  
Author(s):  
Vladimír Socha ◽  
Patrik Kutílek ◽  
Slávka Vitečková

Abstract This work focuses on describing an evaluation method used in nano- and micro-thin films based on fuzzy logic expert systems. The aim is the elimination of comparison complications with mechanical properties of tin films, practical adhesion being one of the most important characteristic of tin films. The basic method for evaluating the practical adhesion strength is scratch test method, while the issue is that research teams use measurement methods based on the non-uniform measurement conditions of adhesion of biocompatible thin films. The authors tested new evaluation method and procedure based on international standards and fuzzy rule based expert system in order to eliminate the problem of comparison of practical adhesion of the films. The article concentrates on testing and using the fuzzy logic expert system designed based on international standards for evaluating adhesion of thin films in nano and micro dimensions. The materials used for tests of the fuzzy expert system were DLC biocompatible layers and substrate a titanium alloy Ti6Al4V.


2006 ◽  
Vol 326-328 ◽  
pp. 199-202 ◽  
Author(s):  
Chung Seog Oh ◽  
Sung Hoon Choa ◽  
Chang Seung Lee ◽  
Hak Joo Lee

The accurate characterization of linear coefficient of thermal expansion (CTE) of thin films is vital for predicting the thermal stress, which often results in warpage and failure of a MEMS structure. In this paper, special emphasis is placed on the development of novel test method to extend an ISDG (Interferometric Strain/Displacement Gage) technique to the direct and accurate CTE measurement of MEMS materials, AlN and Au. The freestanding AlN and Au films are 1 μm thick and 5 mm wide. Strain is directly measured by a brand-new digital type ISDG with two Cr lines deposited on the specimen while heating a specimen in a furnace. The whole test system is verified first by measuring the CTE for the NIST’s SRM (Standard Reference Material) 736 (Cu) block. The measured CTE is 17.3 με/oC up to 167 oC, which agrees well with the NIST’s certified value. The CTE of Au is 25.4 ± 1.15 με/oC and that of AlN film is 3.77 ± 0.12 με/oC. The in-plane displacement resolution is about 5 nm at the best circumstances.


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