CHARACTERIZATION OF Bi2Te3 THIN FILMS FOR APPLICATION IN MICRO-THERMO ELECTRIC COOLERS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4063-4068 ◽  
Author(s):  
SEUNG WOO HAN ◽  
MD ANWARUL HASAN ◽  
KI-HO CHO ◽  
HAK JOO LEE ◽  
DONG-HO KIM ◽  
...  

In this study we have characterized the mechanical and electrical properties of Bi 2 Te 3 thin films prepared by co-sputtering method. The film structure and morphology were revealed using the X-ray diffraction and scanning electron microscopy (SEM). Thickness of the deposited films was measured using SEM observation after FIB (Focused Ion Beam) milling, and the surface roughness of the films was analyzed using AFM (atomic force microscopy). Electrical transport properties were measured with a Hall effect measurement system, while the mechanical properties were evaluated using nanoindentation test method. Results showed that Bi 2 Te 3 thin films have amorphous structure at lower film thicknesses, but as the thickness increases the structure becomes polycrystalline. Surface roughness and crystal size of the films increased with increase in substrate temperature. Films showed higher elastic modulus and hardness values compared to those of the bulk Bi 2 Te 3 alloy. The electrical transport properties of the films were also affected by the substrate temperature.

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.


2021 ◽  
pp. 100113
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M.D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  

2020 ◽  
Vol 7 (1) ◽  
pp. 016114 ◽  
Author(s):  
Yumei Zhang ◽  
Chaoqun Yang ◽  
Li Wang ◽  
Yidan Bai ◽  
Sitong Liu ◽  
...  

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  

1981 ◽  
Vol 78 (4) ◽  
pp. 377-383 ◽  
Author(s):  
P.C. Mathur ◽  
Anil Kumar ◽  
O.P. Taneja ◽  
A.L. Dawar

Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


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