Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements

10.1520/f0418 ◽  
2008 ◽  
Author(s):  
Keyword(s):  
Gallium Arsenide ◽  
Hall Effect ◽  
Constant Composition ◽  
Composition Region ◽  
Gallium Arsenide Phosphide ◽  
Hall Effect Measurements

AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

1966 ◽  
Vol 44 (5) ◽  
pp. 941-948 ◽  
Author(s):  
J. Basinski
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Hall Effect ◽  
Conduction Band ◽  
High Mobility ◽  
Theoretical Expression ◽  
Donor Level ◽  
Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

2015 ◽  
Vol 212 (7) ◽  
pp. 1487-1493 ◽  
Author(s):  
Woong-Jhae Lee ◽  
Hyung Joon Kim ◽  
Egon Sohn ◽  
Hoon Min Kim ◽  
Tai Hoon Kim ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Hall Effect ◽  
Oxygen Diffusion ◽  
Time Dependent ◽  
Hall Effect Measurements

scholarly journals Fractional Quantum Hall Effect Measurements at Zero g Factor

1997 ◽  
Vol 79 (21) ◽  
pp. 4246-4249 ◽  
Author(s):  
D. R. Leadley ◽  
R. J. Nicholas ◽  
D. K. Maude ◽  
A. N. Utjuzh ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Fractional Quantum ◽  
G Factor ◽  
Fractional Quantum Hall ◽  
Hall Effect Measurements

scholarly journals Hall Effect measurements on p-n-p InP structures

2008 ◽  
Vol 38 (1) ◽  
pp. 147-155 ◽  
Author(s):  
C. A. C. Sequeira ◽  
D. M. F. Santos
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurements
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