Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Optical and Transport Properties of p-Type GaAs

2012 ◽  
Vol 36 (1) ◽  
pp. 97-107 ◽  
Author(s):  
Mehnaz Sharmin ◽  
Shamima Choudhury ◽  
Nasrin Akhtar ◽  
Tahmina Begum
Keyword(s):  
Light Intensity ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
Band Gap Energy ◽  
Hall Effect Measurements ◽  
P Type

Electrical properties such as electrical resistivity, Hall coefficient, Hall mobility, carrier concentration of p-type GaAs samples were studied at room temperature (300 K). Resistivity was  found to be of the order of 5.6 × 10-3?-cm. The Hall coefficient (RH) was calculated to be 7.69 × 10-1cm3/C and Hall mobility (?H) was found to be 131cm2/V-s at room temperature from Hall effect   measurements. Carrier concentration was estimated to be 8.12 × 1018/cm3 and the Fermi level was calculated directly from carrier density data which was 0.33 eV. Photoconductivity measurements  were carried on by varying sample current, light intensity and temperature at constant chopping     frequency 45.60 Hz in all the cases mentioned above. It was observed that within the range of sample current 0.1 - 0.25mA photoconductivity remains almost constant at room temperature 300K and it was found to be varying non-linearly with light intensity within the range 37 - 12780 lux. Photoconductivity was observed to be increasing linearly with temperature between 308 and 428 K. Absorption coefficient (?) of the samples has been studied with variation of wavelength (300 -  2500 nm). The value of optical band gap energy was calculated between 1.34 and 1.41eV for the material from the graph of (?h?)2 plotted against photon energy. The value of lattice parameter (a) was found to be 5.651 by implying X-ray diffraction method (XRD).DOI: http://dx.doi.org/10.3329/jbas.v36i1.10926Journal of Bangladesh Academy of Sciences, Vol. 36, No. 1, 97-107, 2012 

Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
J. R. Söderström ◽  
D.H. Chow ◽  
T.C. McGill ◽  
T.J. Watson
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Growth Parameters ◽  
Hole Mobility ◽  
Extensive Study ◽  
Semiconductor Films ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Hall Effect Measurements ◽  
P Type

AbstractWe have grown a number of InAs and GaSb bulk layers on GaAs substrates and studied the properties of the semiconductor films as a function of the various growth parameters. Preliminary results from GaSb growth are presented in addition to an extensive study of InAs growth. The films were characterized during growth by RHEED. RHEED-oscillations were observed during both InAs and GaSb growths. Hall effect measurements yielded peak electron mobilities for InAs of 18,900 cm2/Vs at 300 K and 35,000 cm2/Vs at 77 K. For GaSb the as grown layers were found to be p-type with a carrier concentration of 9x1015cm-3 and a hole mobility of 910 cm2 /Vs at 300 K.

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013 ◽  
Vol 113 (16) ◽  
pp. 164508 ◽  
Author(s):  
R. Macaluso ◽  
M. Mosca ◽  
C. Calì ◽  
F. Di Franco ◽  
M. Santamaria ◽  
...  
Keyword(s):  
Hall Effect ◽  
Zno Films ◽  
Type Assignment ◽  
Inp Substrate ◽  
Hall Effect Measurements ◽  
P Type

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 6034-6040 ◽  
Author(s):  
Hideharu Matsuura ◽  
Yoshitsugu Uchida ◽  
Tadashi Hisamatsu ◽  
Sumio Matsuda
Keyword(s):  
Hall Effect ◽  
Type Silicon ◽  
Hall Effect Measurements ◽  
P Type
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