Frequency Dependence of Breakdown Fields in Single-Crystal NaCl and KCl

The results of studying the frequency and temperature dependences of the electrical conductivity of MnGaInSe4 single crystals on alternating electric current are presented. It was found that in the temperature range of 295.5–360 K at frequencies of 2•104–106 Hz, the regularity σ ∼ fS (0.1≤ s≤1.0) holds for electrical conductivity. It is shown that in the MnGaInSe4 single crystal the frequency dependence of electrical conductivity can be explained using the multiplet model, and the conductivity in these single crystals is characterized by a band-hop mechanism. Based on the dependences log σ ∼ 103/T, the activation energies are determined.

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Pyroelectric properties of 91.5Na0.5Bi0.5TiO3–8.5K0.5Bi0.5TiO3 lead-free single crystal

Journal of Advanced Dielectrics ◽

10.1142/s2010135x21500235 ◽

2021 ◽

Author(s):

Bo Zhang ◽

Renbing Sun ◽

Fang Wang ◽

Tangfu Feng ◽

Pengna Zhang ◽

...

Keyword(s):

Single Crystal ◽

Frequency Dependence ◽

Room Temperature ◽

Pyroelectric Coefficient ◽

Lead Free ◽

Oriented Crystal ◽

Depolarization Temperature ◽

Pyroelectric Properties ◽

Figures Of Merit ◽

Crystallographic Orientations

The dielectric and pyroelectric performances of 91.5Na[Formula: see text]Bi[Formula: see text]TiO3–8.5K[Formula: see text]Bi[Formula: see text]TiO3 lead-free single crystal were investigated. The depolarization temperature of the crystal is about 153[Formula: see text]C. Among the [Formula: see text]001[Formula: see text], [Formula: see text]110[Formula: see text], and [Formula: see text]111[Formula: see text] crystallographic orientations, the [Formula: see text]111[Formula: see text]-oriented crystal possesses the highest pyroelectric coefficient and the largest figures of merit, and the values of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]are 5.63× 10[Formula: see text] C/m2 ⋅ K, 0.06 m2/C, and 21.5 [Formula: see text]Pa[Formula: see text] for the [Formula: see text]111[Formula: see text]-oriented crystal at room temperature. The [Formula: see text]and [Formula: see text]exhibit weak frequency dependence in the range of 100–300 Hz. With the increase of the temperature, the value of [Formula: see text]increases, while the [Formula: see text] value of [Formula: see text] decreases from 18[Formula: see text]C to 103 [Formula: see text]C.

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Electro-elastic moduli and frequency dependence of KN single crystal

Proceedings of ISAF-ECAPD-PFM 2012 ◽

10.1109/isaf.2012.6297785 ◽

2012 ◽

Cited By ~ 2

Author(s):

R. Rouffaud ◽

F. Levassort ◽

M. Pham-Thi ◽

E. Leveugle ◽

A.-C. Hladky-Hennion

Keyword(s):

Single Crystal ◽

Frequency Dependence ◽

Elastic Moduli

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Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

MRS Proceedings ◽

10.1557/proc-446-333 ◽

1996 ◽

Vol 446 ◽

Author(s):

Hong Wang ◽

S. X. Shang ◽

X. J. Su ◽

Z. Wang ◽

M. Wang

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Physical Properties ◽

Single Crystal ◽

Frequency Dependence ◽

Buffer Layer ◽

Loss Tangent ◽

Constant E ◽

Mocvd Technique

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

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