Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Hong Wang ◽  
S. X. Shang ◽  
X. J. Su ◽  
Z. Wang ◽  
M. Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Buffer Layer ◽  
Loss Tangent ◽  
Constant E ◽  
Mocvd Technique

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

Characterization of MgZnO Thin Film for 1 GHz MMIC Applications

2013 ◽  
Vol 832 ◽  
pp. 310-315
Author(s):  
R. Ahmad ◽  
M.S. Shamsudin ◽  
M. Salina ◽  
S.M. Sanip ◽  
M. Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Loss Tangent ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Dielectric Material ◽  
Sol Gel ◽  
Size Reduction ◽  
High Frequencies

MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Seong Jun Kang ◽  
Jeong Seon Ryoo ◽  
Yung Sup Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Lanthanum Titanate

ABSTRACTWe have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

scholarly journals Dielectric and electrical properties of Cr substituted Mg ferrites

2015 ◽  
Vol 39 (1) ◽  
pp. 1-12 ◽  
Author(s):  
AKM Zakaria ◽  
Faizun Nesa ◽  
MA Saeed Khan ◽  
SM Yunus ◽  
NI Khan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Loss Tangent ◽  
Dielectric Loss Tangent ◽  
Lattice Parameter ◽  
Activation Energies ◽  
X Ray Diffraction ◽  
Constant E ◽  
Cr Concentration ◽  
Academy Of Sciences

The spinel ferrites MgCrxFe2-xO4 (0.0 ? × ?1.0) were prepared through the solid state reaction using conventional ceramic method at 1300°C in air. The homogeneous phase of the ferrite samples was observed from the X-ray diffraction study. Lattice parameter of the samples was found to decrease with increasing Cr concentration in the system obeying Vegard’s law. The ac electrical resistivity, measured as a function of temperature, decreases with the increase of temperature indicating the semiconducting nature of all the samples. The activation energies were calculated and found to decrease with increasing Cr content. The lower activation energies are associated with higher electrical conductivity. With the increase of temperature, dielectric constant (e`) and dielectric loss tangent are observed to be increased; while with the increase of frequency, dielectric constant (e`) and dielectric loss tangent decrease for all the samples.Journal of Bangladesh Academy of Sciences, Vol. 39, No. 1, 1-12, 2015

scholarly journals Physical properties and interface studies of YBa2Cu3O7 thin films deposited by laser ablation on Si (111) with buffer layer

1990 ◽  
Vol 164-165 ◽  
pp. 1178-1185 ◽  
Author(s):  
D.H.A. Blank ◽  
W.A.M. Aarnink ◽  
J. Flokstra ◽  
H. Rogalla ◽  
A. van Silfhout
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Physical Properties ◽  
Buffer Layer

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

A comparison of the physical properties of CdTe single crystal and thin film

1997 ◽  
Vol 30 (2) ◽  
pp. 161-165 ◽  
Author(s):  
A Abd El-Mongy ◽  
A Belal ◽  
H El Shaikh ◽  
A El Amin
Keyword(s):  
Thin Film ◽  
Physical Properties ◽  
Single Crystal ◽  
Cdte Single Crystal

Molecular Dynamics Simulation on the Out-of Plane Thermal Conductivity of Single-Crystal Carbon Thin Films

2009 ◽  
Vol 60-61 ◽  
pp. 430-434 ◽  
Author(s):  
Xing Li Zhang ◽  
Zhao Wei Sun ◽  
Guo Qiang Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Potential Energy ◽  
Film Thickness ◽  
Single Crystal ◽  
Diamond Crystal ◽  
Dynamics Simulation ◽  
Crystal Direction

In this article, we select corresponding Tersoff potential energy to build potential energy model and investigate the thermal conductivities of single-crystal carbon thin-film. The equilibrium molecular dynamics (EMD) method is used to calculate the nanometer thin film thermal conductivity of diamond crystal at crystal direction (001), and the non-equilibrium molecular dynamics (NEMD) is used to calculate the nanometer thin film thermal conductivity of diamond crystal at crystal direction (111). The results of calculations demonstrate that the nanometer thin film thermal conductivity of diamond crystal is remarkably lower than the corresponding bulk experimental data and increase with increasing the film thickness, and the nanometer thin film thermal conductivity of diamond crystal relates to film thickness linearly in the simulative range. The nanometer thin film thermal conductivity also demonstrates certain regularity with the change of temperature. This work shows that molecular dynamics, applied under the correct conditions, is a viable tool for calculating the thermal conductivity of nanometer thin films.

scholarly journals Metal phthalocyanines: thin-film formation, microstructure, and physical properties

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21716-21737
Author(s):  
Rosemary R. Cranston ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Small Molecules ◽  
Film Formation ◽  
Proper Function ◽  
Next Generation ◽  
Metal Phthalocyanines ◽  
Thin Film Formation

Metal phthalocyanines (MPcs) are an abundant class of conjugated small molecules comprising and their integration into thin films is critial for the proper function of next generation applications.

Radio-wave reflectivity from cold glaciers

2020 ◽  
Author(s):  
Olga Yushkova ◽  
Taisiya Dymova ◽  
Viktor Popovnin
Keyword(s):  
Dielectric Constant ◽  
Dielectric Permittivity ◽  
Reflection Coefficient ◽  
Surface Temperature ◽  
Frequency Dependence ◽  
Depth Profile ◽  
Loss Tangent ◽  
Thin Layers ◽  
The Arctic ◽  
Radio Waves

<p>Radio echo-sounding is a powerful technique for investigating the subsurface of the glaciers. However, physics underlying the formation of the reflected signal is sometimes oversimplified  in the geophysical glacier studies, leading to wrong results. Various remote sensing techniques use different wavelengths (e.g., 13.575 GHz for CryoSat and 20-25/200-600 MHz for ground-penetrating radar), but it is still not clear which particular wavelengths are the best to detect different characteristics of the ice. Possibly, the results gained using different wavelengths may not coincide but rather complement each other due to frequency dependence of the dielectric permittivity and conductivity of snow, ice and especially water.</p><p>Here we attempt to construct an electrophysical model of a cold glacier. This mathematical model considers the variability of the depth profile of the complex dielectric permittivity depending on the frequency of the probing radio signal and the surface temperature. A series of calculations of the reflection coefficients of radio waves from the modelled glacier show that at low temperatures for frequencies above 1 MHz the real part of the dielectric constant of the glacier does not change with frequency and surface temperature, but depends on the glacier structure, while the depth profile of the loss tangent is constant throughout the glacier.  As wavelength decreases, the absorption of radio-waves by the glacier decreases and the frequency dependence of the reflection coefficient becomes a periodic function, its period and amplitude depend on the glacier thickness, the dielectric constant of the bedrock and ice on the surface.</p><p>The range of radio-waves from 0.1 to 1 MHz is not optimal for sounding cold glaciers: the absorption of radio-waves by ice is large for studying thick layers of the glacier, and the wavelength does not allow studying thin layers. Hence, reflection from the glacier surface prevails upon reflection of the signal. The small absorption of short radio waves by ice leads to the fact that the frequency dependence of the reflection coefficient of short radio-waves is practically the sum of the partial reflections of radio-waves from the surface and internal snow/firn and firn/ice boundaries. Period and amplitude of oscillations of the function  depend on the depth of the internal boundaries and the gradient of dielectric characteristics of ice, snow, firn and bedrock.</p><p>Changes in surface temperature, leading to a change in the loss tangent of the upper glacier layers, are manifested in the phase magnitude of the reflection coefficient of radio-waves:it grows with the temperature. Theoretically, the high-frequency signal reflected from the glacier contains information about the structure of the cold glacier and the depth distribution of the dielectric constant, but to restore the electrophysical parameters of the glaciers, it is necessary to use a broadband signal with smooth spectrum and high digitization speed.</p><p>The reported study was funded by RFBR, project number 18-05-60080 (“Dangerous nival-glacial and cryogenic processes and their impact on infrastructure in the Arctic”).</p>

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