scholarly journals Электропроводность монокристаллов MnGaInSе-=SUB=-4-=/SUB=- на переменном токе

Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
М.Б. Мурадов

The results of studying the frequency and temperature dependences of the electrical conductivity of MnGaInSe4 single crystals on alternating electric current are presented. It was found that in the temperature range of 295.5–360 K at frequencies of 2•104–106 Hz, the regularity σ ∼ fS (0.1≤ s≤1.0) holds for electrical conductivity. It is shown that in the MnGaInSe4 single crystal the frequency dependence of electrical conductivity can be explained using the multiplet model, and the conductivity in these single crystals is characterized by a band-hop mechanism. Based on the dependences log σ ∼ 103/T, the activation energies are determined.

Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
В.И. Гусейнов ◽  
С.Ш. Курбанов

AbstractThe results obtained in a study of the frequency and temperature dependences of the ac electrical conductivity of FeIn_2Se_4 single crystals are presented. It is found that the law σ ~ f ^ S (0.1 ≤ S ≤ 1.0) is obeyed for electrical conductivity in the 295–375 K temperature range at frequencies of 2 × 10^4–10^6 Hz. It shown that the frequency dependence of the conductivity in an FeIn_2Se_4 single crystal can be accounted for in terms of the multiplet model, and, consequently, the conductivity in these single crystals is characterized by the band-hopping mechanism.


Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
М.Б. Мурадов

The results of studying frequency and temperature dependences of AC electrical conductivity in FeGaInSe4 crystals are presented. It was found in the frequency interval f = 5 • 104−106 Hz, the regularity σ ∝ fS (0.1 ≤ s ≤ 1.0) holds for electrical conductivity. From the temperuture dependences the activation energies were determined. It is shown that in the FeGaInSe4 crystal, the frequency dependence of electrical conductivity can be explained using the multiplet model, which means that the conductivity in these crystals is characterized by a band-hop mechanism.


1978 ◽  
Vol 33 (10) ◽  
pp. 1095-1098 ◽  
Author(s):  
G. Bienek ◽  
W. Tuszynski ◽  
G. Gliemann

Abstract The visible and near-ultraviolet spectrum of rhodium(II)acetate hydrate single crystals has been measured in a temperature range from 10 K to 295 K. Two band systems centered at 17,000 cm-1 and 22,000 cm-1 have been found, both consisting of components polarized parallel to and perpendicular to the rhodium-rhodium z-axis. Polarizations, intensities and temperature dependences are consistent with an assignment of z-polarized a1g →a2u and xy-polarized eg →a2u transitions for the lower energy band. For the higher energy band it could not be determined definitely whether only the b2g →-b1u and eg → b1u transitions give rise to the z-and x,y-polarization directions, respectively, or if b1g → b2u and eg →b2u also make a contribution.


The optical absorption spectra of single crystals and thin films of MoO 3 have been measured in the temperature range 150 to 340 °K with polarized light. At room temperature, the absorption spectrum of a single crystal consists of two peaks at λ 4130 and λ 3930 Å with E || C and only one absorption peak at 4250 Å with E ⊥ C followed by a rapid rise in absorption. The temperature and frequency dependence of the absorption coefficient in the edge over a range of absorption magnitudes 10 2 -10 5 cm -1 are described by expressions of the form K(v, T) = K 0 exp[— (β/kT) (E 0 — hv )]. The temperature dependence of the absorption edge was found to be linear from 340 to 150 °K with a temperature coefficient of — 6.2 x 10 -4 and — 9.3 x 10 -4 eV/°K for E || C and E ⊥ C , respectively. The corresponding temperature co­efficients in thin films are — 2.7 x 10 -4 and —4.0 x 10 -4 eV/°K for E|| and ⊥ to the film surface, respectively. Measurements have been made of the refractive indices of a single crystal and thin films. Ultraviolet irradiation of a thin film of MoO 3 produces a broad colour centre band having a maximum at 8700 Å. Several absorption peaks are resolvable in polarized light. On cooling down to 150 °K, the peak position shifts to shorter wavelength by 400 Å (4.67 x 10 -4 eV/°K). An e. s. r. signal with g = 2.001 ± 0.005 has been observed in the colour film. The electrical conductivity has been measured on single crystals and polycrystalline samples in the temperature range 25 to 500 °C, and the activation energies are found to be 1.83 ± 0.01 eV (intrinsic) and 0.29 to 0.70 eV (extrinsic). Photoconductivity has been measured in single crystals and thin films as a function of photon energy, temperature, and irradiation intensity. Trapping plays a significant role in the conduction phenomena. The thermal activation energies associated with different trapping levels were determined from the photoconductive decay curves and the electrical glow peaks measurements and were found to be in the range 0.16 to 0.64 eV.


2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


1991 ◽  
Vol 235 ◽  
Author(s):  
Jung H. Shin ◽  
J. S. Im ◽  
H. A. Atwater

ABSTRACTThe dynamics of relaxation of amorphous silicon after unrelaxation (creation of defects) by irradiation with 600 KeV Kr++ ions is investigated using the changes in electrical conductivity of amorphous silicon. By measuring the conductivity of such unrelaxed amorphous silicon after being partially relaxed by isochronal anneals in a temperature range from 383 to 873° K, it is shown that conductivity of amorphous silicon decreases monotonically by up to 3 orders of magnitude as it relaxes; i.e. that conductivity is a measure of the degree of relaxation. Furthermore, it is found that such change in conductivity can be completely reversed by a subsequent unrelaxation with ion irradiation. Continuous in situ measurements of conductivity of amorphous silicon before, during and immediately after irradiation in a temperature range from 77 to 573° K show that relaxation occurs even at 77°K. Finally, the relaxation of amorphous silicon thus measured is linear when plotted against ln(t), a behavior that is characteristic of relaxation with a spectrum of activation energies.


2011 ◽  
Vol 497 ◽  
pp. 26-30 ◽  
Author(s):  
Shinichi Furusawa ◽  
Hiroshi Ochiai ◽  
Khoji Murayama

Single crystals of lithium zinc titanate (Li2ZnTi3O8) were grown in a double-mirror type optical floating-zone furnace for the first time. Single crystals were characterized by X-ray powder diffraction and Laue measurements. The ionic conductivity of the single crystals was measured in the temperature range of 400–700 K. Below 600 K, the ionic conductivity of the single crystal is one to two orders of magnitude higher than that of polycrystalline Li2ZnTi3O8. In the temperature range of 550–600 K, the temperature dependence of the ionic conductivity shows non-Arrhenius behaviour.


2006 ◽  
Vol 11-12 ◽  
pp. 145-148 ◽  
Author(s):  
Yuji Okuyama ◽  
Noriaki Kurita ◽  
Norihiko Fukatsu

The phenomenon of the incorporation of hydrogen into a single crystal of 0.1 mol% Ba-doped α-alumina was studied using IR absorption analysis. A large wide band of IR absorption was observed. This band was attributed to the stretching vibration of the OH bond. The electrical conductivity of the specimens has been measured by the two-probe ac technique in the temperature range 1073-1673K. The H/D-isotope effect on the conductivity was observed. It was found that the dominant charge carrier of barium doped α -alumina is proton under the reducing atmosphere containing hydrogen.


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