Elektronenbeugungs- Reflexprofilanalyse - eine neue Methode zur Untersuchung von Kristalloberflächen / Spot profile analysis of low energy electron diffraction - a novel method for the study of crystal surfaces

1988 ◽  
Vol 55 (JG) ◽  
Author(s):  
M. Wilmers
Keyword(s):  
Electron Diffraction ◽  
Profile Analysis ◽  
Low Energy ◽  
Energy Electron ◽  
Crystal Surfaces ◽  
Low Energy Electron Diffraction ◽  
Novel Method ◽  
Low Energy Electron

Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part I1

1999 ◽  
Vol 214 (10) ◽  
Author(s):  
M. Horn-von Hoegen
Keyword(s):  
Electron Diffraction ◽  
Surface Defects ◽  
Profile Analysis ◽  
Domain Size ◽  
Low Energy ◽  
Energy Electron ◽  
Vicinal Surfaces ◽  
Low Energy Electron Diffraction ◽  
Facet Orientation ◽  
Low Energy Electron

AbstractThe universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Å. With the knowledge of the spot profile we could determine island and domain size distributions – even during deposition – and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.

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