scholarly journals Surface acoustic wave band gaps in micro-machined air/silicon phononic structures — theoretical calculation and experiment

Author(s):  
Tsung-Tsong Wu ◽  
Zi-Gui Huang ◽  
Shih-Yang Liu

AbstractIn this paper, we investigate the band gaps of micro-machined air/silicon phononic structures both theoretically and experimentally. Based on the plane wave expansion method, dispersion relations of the surface and bulk modes with square lattices in air/silicon two-dimensional phononic structures are calculated and discussed. Band gap widths due to the filling fraction and temperature variation are also analyzed. On the experimental side, generation and reception of high frequency surface acoustic wave in this band structure are realized by a pair of interdigital transducers (IDT) with frequency around 200 MHz. Details of the fabricating process of the phononic structure and the high frequency surface wave generating and receiving IDTs are given. The results demonstrate clearly the existence of SAW band gap in the micro-machined phononic structure and this study may serve as a basis for studying the band gap of SAW in micro-machined phononic structure with the dimension in the order of micrometer and find applications in the RF SAW devices.

2010 ◽  
Vol 81 (21) ◽  
Author(s):  
Abdelkrim Khelif ◽  
Younes Achaoui ◽  
Sarah Benchabane ◽  
Vincent Laude ◽  
Boujamaa Aoubiza

2011 ◽  
Vol 675-677 ◽  
pp. 1085-1088
Author(s):  
Zong Jian Yao ◽  
Gui Lan Yu ◽  
Jian Bao Li

The band structures of flexural waves in a ternary locally resonant phononic crystal thin plate are studied using the improved plane wave expansion method. And the thin concrete plate composed of a square array of steel cylinders hemmed around by rubber is considered here. Absolute band gaps of flexural vibration with low frequency are shown. The calculation results show that the band gap width is strongly dependent on the filling fraction, the radius ratio, the mass density and the Young’s modulus contrasts between the core and the coating. So by changing these physical parameters, the required band gap could be obtained.


Author(s):  
Xinya Zhang ◽  
Ted Jackson ◽  
Emmanuel Lafound ◽  
Pierre Deymier ◽  
Jerome Vasseur

Novel phononic crystal structures on thin plates for material science applications in ultrasonic range (~ MHz) are described. Phononic crystals are created by a periodic arrangement of two or more materials displaying a strong contrast in their elastic properties and density. Because of the artificial periodic elastic structures of phononic crystals, there can exist frequency ranges in which waves cannot propagate, giving rise to phononic band gaps which are analogous to photonic band gaps for electromagnetic waves in the well-documented photonic crystals. In the past decades, the phononic structures and acoustic band gaps based on bulk materials have been researched in length. However few investigations have been performed on phononic structures on thin plates to form surface acoustic wave band gaps. In this presentation, we report a new approach: patterning two dimensional membranes to form phononic crystals, searching for specific acoustic transport properties and surface acoustic waves band gaps through a series of deliberate designs and experimental characterizations. The proposed phononic crystals are numerically simulated through a three-dimensional plane wave expansion (PWE) method and experimentally characterized by a laser ultrasonics instrument that has been developed in our laboratory.


2013 ◽  
Vol 652-654 ◽  
pp. 1377-1382
Author(s):  
Jiao He ◽  
Guang Hui Fan ◽  
De Xun Zhao ◽  
Ying Kai Liu

The band gap of a new two-dimensional phononic crystal was studied by the plane-wave expansion method. The two-dimensional phononic crystal is formed by square-shape array geometry of iron cylinders with square cross section inserted in an epoxy resin. The band gaps of different structures were calculated such as defect-free, single cavity crystal point defect states, crystal point defect states with (10) direction coupling, crystal point defect states with (10) direction next-nearest-neighbor coupling, and crystal point defect states with (11) direction next-nearest-neighbor coupling. Compared with that of defect-free, it is conclude that point defect is beneficial to the production of band gaps. The bandwidth of point defect is about 5 times larger than that of the defect-free crystal with the filling fraction F=0.4. In addition, the maximum number of band gap is in the crystal point defect states with (10) direction next-nearest-neighbor coupling. It will provide a theoretical reference for the manufacture of phononic crystal.


2006 ◽  
Vol 88 (4) ◽  
pp. 041911 ◽  
Author(s):  
Xinya Zhang ◽  
Ted Jackson ◽  
Emmanuel Lafond ◽  
Pierre Deymier ◽  
Jerome Vasseur

2014 ◽  
Vol 31 (2) ◽  
pp. 139-145 ◽  
Author(s):  
H.-Y. Tsai ◽  
W.-H. Hsu ◽  
Y.-K Yu ◽  
R. Chen

AbstractIn this study, the properties of surface acoustic wave (SAW) filters, including phase velocity and electromechanical coupling coefficient (K2) are investigated. The effective surface permittivity (ESP) method was employed to estimate the K2 of bulk materials (single layer) and multi-layer (double-layer and trilayer) structures. In the cases of bulk materials, the calculation results agree with the experimental data, and the errors are less than 7% for quartz. In the cases of double-layer materials, the phase velocity and K2 of various materials, such as ZnO/Diamond and LiNbO3/Diamond, were acquired, and the results demonstrate that LiNbO3/diamond is the optimal choice for high-frequency SAW devices. For the cases of trilayer, the structure of ZnO/PZT/diamond has relatively high K2 and phase velocity. Therefore, this structure is the optimal trilayer structure for high-frequency SAW devices. The study demonstrates that ESP method can be successfully used for estimating SAW properties in piezoelectric multi-layer structures even though the structures contain nonpiezoelectric film (diamond). The proposed numerical computation has the potential to shorten the developing time of SAW device.


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