Recent developments in deposition techniques for optical thin films and coatings

2013 ◽  
pp. 3-25 ◽  
Author(s):  
H. Angusmacleod
2013 ◽  
Vol 743-744 ◽  
pp. 878-885
Author(s):  
Ming Wang ◽  
Xun Gang Diao ◽  
Ting Ting Guo ◽  
Xuan Wang

Nowadays, high performance p-type transparent conductive oxide (TCO) thin films have gained tremendous intersts, and the fact is that if p-type TCOs with high electrical conductivity and optical transmittance can be fabricated, transparent p-n junctions can be obtained and invisible electronics be realized, and hence the use area of TCOs will be highly broadened. A lot of work have been done on non-stoichiometric and doped versions of p-type TCOs in the last few years to improve the optical and electrical properties by various deposition techniques. ZnO-based thin films were thought to be the most promising candidate for p-type TCOs based on the fact that ZnO has advantages over the others, so in this paper the development of ZnO-based p-type TCOs has been discussed. Firstly, the reasons why p-type ZnO-based TCOs are difficult to synthesize were discussed, and then the general ways now used to produce p-type ZnO-based TCOs were summerized, including intrinsic p-type ZnO, doping of groupelements, codoping of and elements, doping of group elements, the origin of p-type conductivity and the feasibility of each way, and the state-of-the-art optical and electrical properties were presented. Finally, the specific shortcomings in producing high quality p-type TCOs were discussed. Based on the comparision, it is believed that the doping of groupelements in ZnO may be the most pronising way in realizing p-type TCO.


1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.


2017 ◽  
Vol 643 ◽  
pp. 53-59 ◽  
Author(s):  
B. Giroire ◽  
M. Ali Ahmad ◽  
G. Aubert ◽  
L. Teule-Gay ◽  
D. Michau ◽  
...  

2018 ◽  
Vol 660 ◽  
pp. 120-160 ◽  
Author(s):  
M. Mozetič ◽  
A. Vesel ◽  
G. Primc ◽  
C. Eisenmenger-Sittner ◽  
J. Bauer ◽  
...  

2014 ◽  
pp. 265-309 ◽  
Author(s):  
J. Orava ◽  
T. Kohoutek ◽  
T. Wagner

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