scholarly journals Gabor systems on positive half line via Walsh-Fourier transform

2020 ◽  
Vol 12 (2) ◽  
pp. 468-482
Author(s):  
O. Ahmad ◽  
N.A. Sheikh
Keyword(s):  
Fourier Transform ◽  
Applied Mathematics ◽  
Vital Role ◽  
Complete Characterization ◽  
Half Line ◽  
Tight Frames ◽  
Gabor Systems ◽  
Orthonormal Bases ◽  
Positive Half

Gabor systems play a vital role not only in modern harmonic analysis but also in several fields of applied mathematics, for instances, detection of chirps, or image processing. In this paper, we investigate Gabor systems on positive half line via Walsh-Fourier transform. We provide the complete characterization of orthogonal Gabor systems on positive half line. Furthermore, we provide the characterization of tight frames and orthonormal bases of Gabor systems on positive half line in Fourier domain.

scholarly journals Nonuniform biorthogonal wavelets on positive half line via Walsh Fourier transform

2021 ◽  
Vol 29 (1) ◽  
Author(s):  
Owais Ahmad ◽  
Neyaz A. Sheikh ◽  
Mobin Ahmad
Keyword(s):  
Multiresolution Analysis ◽  
Linear Span ◽  
Complete Characterization ◽  
Riesz Bases ◽  
Half Line ◽  
Scaling Functions ◽  
Biorthogonal Wavelet ◽  
Biorthogonal Wavelets ◽  
Single Function ◽  
Positive Half

AbstractIn this article, we introduce the notion of nonuniform biorthogonal wavelets on positive half line. We first establish the characterizations for the translates of a single function to form the Riesz bases for their closed linear span. We provide the complete characterization for the biorthogonality of the translates of scaling functions of two nonuniform multiresolution analysis and the associated biorthogonal wavelet families in $$L^2({\mathbb {R}}^+)$$ L 2 ( R + ) . Furthermore, under the mild assumptions on the scaling functions and the corresponding wavelets associated with nonuniform multiresolution analysis, we show that the wavelets can generate Reisz bases.

scholarly journals Orthogonal Gabor systems on local fields

Filomat ◽  
2017 ◽  
Vol 31 (16) ◽  
pp. 5193-5201
Author(s):  
Firdous Shah ◽  
Owais Ahmad ◽  
Neyaz Sheikh
Keyword(s):  
Positive Characteristic ◽  
Local Fields ◽  
Tight Frames ◽  
Fourier Domain ◽  
Gabor Systems ◽  
Orthonormal Bases ◽  
Basic Equations

The objective of this paper is to provide complete characterizations of orthogonal families, tight frames and orthonormal bases of Gabor systems on local fields of positive characteristic by means of some basic equations in the Fourier domain.

Experimental Characterization of Mechanical Behavior of Cord-Rubber Composites

1982 ◽  
Vol 10 (1) ◽  
pp. 37-54 ◽  
Author(s):  
M. Kumar ◽  
C. W. Bert
Keyword(s):  
Response Characteristic ◽  
Cord Compression ◽  
Complete Characterization ◽  
Strain Response ◽  
Strain Gages ◽  
Experimental Characterization ◽  
Rubber Composites ◽  
Stress Strain ◽  
Strain Data

Abstract Unidirectional cord-rubber specimens in the form of tensile coupons and sandwich beams were used. Using specimens with the cords oriented at 0°, 45°, and 90° to the loading direction and appropriate data reduction, we were able to obtain complete characterization for the in-plane stress-strain response of single-ply, unidirectional cord-rubber composites. All strains were measured by means of liquid mercury strain gages, for which the nonlinear strain response characteristic was obtained by calibration. Stress-strain data were obtained for the cases of both cord tension and cord compression. Materials investigated were aramid-rubber, polyester-rubber, and steel-rubber.

Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

1997 ◽  
Author(s):  
G. Meneghesso ◽  
E. Zanoni ◽  
P. Colombo ◽  
M. Brambilla ◽  
R. Annunziata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electrostatic Discharge ◽  
Stress Test ◽  
Complete Characterization ◽  
Stress Tests ◽  
Test Procedures ◽  
Emission Microscopy ◽  
Fast Rise ◽  
Scanning Electron

Abstract In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 μm CMOS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurement of the tum-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress test with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

scholarly journals Complete characterization of spin chains with two Ising symmetries

2019 ◽  
Vol 125 (1) ◽  
pp. 10008 ◽  
Author(s):  
Bat-el Friedman ◽  
Atanu Rajak ◽  
Emanuele G. Dalla Torre
Keyword(s):  
Complete Characterization ◽  
Spin Chains
Sign in / Sign up

Export Citation Format

Share Document