scholarly journals Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

2020 ◽  
Vol 6 (9) ◽  
pp. 10-17
Author(s):  
A. Razzakov ◽  
A. Matnazarov ◽  
M. Latipova ◽  
A. Japakov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Growth Direction ◽  
Si Substrates ◽  
Growth Modes ◽  
Physico Chemical ◽  
Technological Growth ◽  
Crystal Films ◽  
Semiconductor Solid Solution ◽  
Film Interface

Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.

scholarly journals Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

2021 ◽  
Vol 7 (3) ◽  
pp. 200-205
Author(s):  
A. Razzakov ◽  
A. Latipova ◽  
A. Qodirov
Keyword(s):  
Experimental Data ◽  
Solid Solution ◽  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Theoretical Calculations ◽  
Growth Modes ◽  
Technological Growth ◽  
Single Crystal Films ◽  
Crystal Films

Using experimental data, as well as using theoretical calculations, the results of studies of the composition of melt solutions (Sn + Ge + Si, Ga + Ge + Si) from temperature conditions are presented. Single-crystal films of a graded-gap solid solution Si1-xGex (0<x<1) on Si <111> substrates were obtained by liquid-phase epitaxy from a limited tin, gallium solution-melt. Optimal technological growth modes are found for obtaining crystalline perfect epitaxial layers and structures.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

SOLID SOLUTION FORMATION DURING LIQUID PHASE SINTERING

1986 ◽  
Vol 47 (C1) ◽  
pp. C1-441-C1-445
Author(s):  
E. KOSTIĆ ◽  
S. J. KISS ◽  
D. CEROVIĆ
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Sintering ◽  
Solid Solution Formation ◽  
Solution Formation

scholarly journals Preparation of Li3PS4–Li3PO4 Solid Electrolytes by Liquid-Phase Shaking for All-Solid-State Batteries

2021 ◽  
Vol 2 (1) ◽  
pp. 39-48
Author(s):  
Nguyen H. H. Phuc ◽  
Takaki Maeda ◽  
Tokoharu Yamamoto ◽  
Hiroyuki Muto ◽  
Atsunori Matsuda
Keyword(s):  
Solid Solution ◽  
Solid State ◽  
Liquid Phase ◽  
Room Temperature ◽  
Reaction Medium ◽  
Magic Angle Spinning ◽  
Resonance Spectroscopy ◽  
Synthesis Methods ◽  
Magic Angle ◽  
Angle Spinning

A solid solution of a 100Li3PS4·xLi3PO4 solid electrolyte was easily prepared by liquid-phase synthesis. Instead of the conventional solid-state synthesis methods, ethyl propionate was used as the reaction medium. The initial stage of the reaction among Li2S, P2S5 and Li3PO4 was proved by ultraviolet-visible spectroscopy. The powder X-ray diffraction (XRD) results showed that the solid solution was formed up to x = 6. At x = 20, XRD peaks of Li3PO4 were detected in the prepared sample after heat treatment at 170 °C. However, the samples obtained at room temperature showed no evidence of Li3PO4 remaining for x = 20. Solid phosphorus-31 magic angle spinning nuclear magnetic resonance spectroscopy results proved the formation of a POS33− unit in the sample with x = 6. Improvements of ionic conductivity at room temperature and activation energy were obtained with the formation of the solid solution. The sample with x = 6 exhibited a better stability against Li metal than that with x = 0. The all-solid-state half-cell employing the sample with x = 6 at the positive electrode exhibited a better charge–discharge capacity than that employing the sample with x = 0.

Pulsed Laser Treatment of Virgin, Self and Europium Implanted Nickel: Evidence of Defect Impurity Interaction

1981 ◽  
Vol 7 ◽  
Author(s):  
G. Battaglin ◽  
A. Carnera ◽  
G. Della Mea ◽  
P. Mazzoldi ◽  
Animesh K. Jain ◽  
...  
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Laser Treatment ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Metastable Solid Solution ◽  
Ion Channeling ◽  
Impurity Interaction ◽  
The Eu

ABSTRACTWe present a comparative study (by 1.8 MeV 4He+ ion channeling) of virgin, self and Eu implanted single crystals of nickel, under irradiation with single ruby laser pulses. The as implanted Eu is nearly non-substitutional and remains so, even after laser treatment. The comparative defect dechanneling behaviour provides explicit evidence of defect-impurity interaction which may be suppressing the formation of an expected metastable solid solution in the Eu-Ni system, which possesses miscibility in the liquid phase. A clear surface Eu peak appears at 2.1 J/cm2.

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 230-233
Author(s):  
Yukimune Watanabe ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Diffusion Mechanism ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Process Conditions ◽  
Heteroepitaxial Growth ◽  
Crystal Axis ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Better Than

The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10-3 Pa or 7.8 × 10-2 Pa in this research. Under the relatively low pressure of 7.8 × 10-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.

Solid Solution Alloy Effects on Microstructure and Indentation Hardness in Pt-Ru Thin Films

2001 ◽  
Vol 673 ◽  
Author(s):  
Seungmin Hyun ◽  
Oliver Kraft ◽  
Richard P. Vinci
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Elastic Moduli ◽  
Composition Range ◽  
Dislocation Motion ◽  
Solid Solution Alloy ◽  
Indentation Hardness ◽  
Solid Solution Strengthening ◽  
Si Substrates ◽  
Solution Strengthening

ABSTRACTThe elastic moduli and flow stresses of as-deposited Pt and Pt-Ru solid solution thin films were investigated by the nanoindentation method. The influence of solid solution alloying was explored by depositing Pt-Ru solid solution thin films with various compositions onto Si substrates. The 200 nm films were prepared by DC magnetron cosputtering with a Ru composition range from 0 to 20wt%. As expected, the modulus and the flow stress both increased significantly with an increase in Ru. The experimental results compare favorably to predictions based on a simple dislocation motion model consisting of three strengthening terms: substrate constraint, grain size strengthening and solid solution strengthening.

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