The Realization and Analysis of Capacitance Self Tracing (CST) Method for Wide Band Response Measurement of Carrier Type Dynamic Strain Amplifier

A wide‐band time‐domain EM system, known as UTEM, which uses a large fixed transmitter and a moving receiver has been developed and used extensively in a variety of geologic environments. The essential characteristics that distinguish it from other systems are that its system function closely approximates a stepfunction response measurement and that it can measure both electric and magnetic fields. Measurement of step rather than impulse response simplifies interpretation of data amplitudes, and improves the detection of good conductors in the presence of poorer ones. Measurement of electric fields provides information about lateral conductivity contrasts somewhat similar to that obtained by the gradient array resistivity method.

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Wide-band electrooptic intensity modulator frequency response measurement using an optical heterodyne down-conversion technique

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2005.860303 ◽

2006 ◽

Vol 54 (1) ◽

pp. 240-246 ◽

Cited By ~ 15

Author(s):

A.K.M. Lam ◽

M. Fairburn ◽

N.A.F. Jaeger

Keyword(s):

Frequency Response ◽

Wide Band ◽

Optical Heterodyne ◽

Response Measurement ◽

Intensity Modulator ◽

Frequency Response Measurement ◽

Down Conversion

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Seven-colour photometry at the Geneva Observatory

Symposium - International Astronomical Union ◽

10.1017/s0074180900053535 ◽

1966 ◽

Vol 24 ◽

pp. 262-266 ◽

Cited By ~ 1

Author(s):

M. Golay

Keyword(s):

Wide Band ◽

Electric System ◽

Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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