scholarly journals The Effect of a Cylindrical Side Wall on DC Breakdown Voltage in Transformer Oil under Non-uniform Electric Field

1999 ◽  
Vol 119 (1) ◽  
pp. 56-61
Author(s):  
Takeshi Takashima ◽  
Ryoichi Hanaoka ◽  
Toshiyuki Kohrin ◽  
Tadahiro Sakuta
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Side Wall ◽  
Transformer Oil ◽  
Uniform Electric Field

scholarly journals AC Breakdown Characteristics of c-C4F8/N2 Gas Mixtures in an Extremely Non-Uniform Electric Field

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3533 ◽  
Author(s):  
Lin Lin ◽  
Qingguo Chen ◽  
Xinyu Wang ◽  
Hui Zhang ◽  
Haoran Feng ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Volume Fraction ◽  
Low Voltage ◽  
Environmentally Friendly ◽  
Gas Pressure ◽  
Uniform Electric Field ◽  
Electrode Spacing ◽  
Electrode Distance ◽  
Liquefaction Temperature

Octafluorocyclobutane (c-C4F8) is one of the environmentally friendly gases with the potential to replace SF6. In this paper, the AC breakdown characteristics of c-C4F8/N2 mixture in an extremely non-uniform electric field were studied; the effects of the gas pressure, electrode distance, and c-C4F8 volume fraction on the breakdown voltage were analyzed; and the feasibility of replacing SF6 with c-C4F8/N2 was verified. The results show that the breakdown voltage of c-C4F8 /N2 increases with an increase in pressure, electrode spacing, and volume fraction of c-C4F8 in an extremely non-uniform electric field. Under the same conditions, the breakdown voltage of 20%c-C4F8/80%N2 is 46–90% that of 20%SF6/80%N2. When the pressure is 0.3 MPa, the 20%c-C4F8/80%N2 breakdown voltage can reach over 57% that of SF6. Taking into consideration the environment, liquefaction temperature, and insulation strength, 20%c-C4F8/80%N2 may replace SF6 used for medium- and low-voltage equipment.

Study on dynamics of the bubble in transformer oil under non-uniform electric field

2016 ◽  
Vol 10 (5) ◽  
pp. 498-504 ◽  
Author(s):  
Zhao Tao ◽  
Liu Yunpeng ◽  
Lü Fangcheng ◽  
Du Ruihong
Keyword(s):  
Electric Field ◽  
Transformer Oil ◽  
Uniform Electric Field

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

2008 ◽  
Vol 600-603 ◽  
pp. 995-998 ◽  
Author(s):  
Toru Hiyoshi ◽  
Tsutomu Hori ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Device Simulation ◽  
Side Wall ◽  
Experimental Results ◽  
Pin Diode ◽  
Pin Diodes ◽  
Vertical Side ◽  
Mesa Structure ◽  
Rounded Corner

A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. An improved bevel mesa structure, nearly vertical side-wall at the edge of pn junction and rounded corner at mesa bottom, has been formed by reactive ion etching (RIE). The junction termination extension (JTE) region has been optimized by device simulation, and simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been discussed.

Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes

2018 ◽  
Vol 27 (03n04) ◽  
pp. 1840018
Author(s):  
Mst Shamim Ara Shawkat ◽  
Mohammad Habib Ullah Habib ◽  
Md Sakib Hasan ◽  
Mohammad Aminul Haque ◽  
Nicole McFarlane
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Gate Voltage ◽  
Electric Field Distribution ◽  
Device Simulation ◽  
Deep Submicron ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Submicron Process

A perimeter gated SPAD (PGSPAD), a SPAD with an additional gate terminal, prevents premature perimeter breakdown in standard CMOS SPADs. At the same time, a PGSPAD takes advantage of the benefits of standard CMOS. This includes low cost and high electronics integration capability. In this work, we simulate the effect of the applied voltage at the perimeter gate to develop a consistent electric field distribution at the junction through physical device simulation. Additionally, the effect of the shape of the device on the electric field distribution has been examined using device simulation. Simulations show circular shape devices provide a more uniform electric field distribution at the junction compared to that of rectangular and octagonal devices. We fabricated PGSPAD devices in a sub-micron process (0.5 μm CMOS process and 0.5 μm high voltage CMOS process) and a deep-submicron process (180 nm CMOS process). Experimental results show that the breakdown voltage increases with gate voltage. The breakdown voltage increases by approximately 1.5 V and 2.5 V with increasing applied gate voltage magnitude from 0 V to 6 V for devices fabricated in 0.5 μm and 180 nm standard CMOS process respectively.

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