scholarly journals Surface Flashover of Dielectrics During Low-Energy Electron Beam Irradiation in Vacuum

1999 ◽  
Vol 119 (2) ◽  
pp. 177-182 ◽  
Author(s):  
Haruhisa Fujii ◽  
Sanju Hiro
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Surface Flashover ◽  
Low Energy Electron

scholarly journals Dose-rate effect of low-energy electron beam irradiation on bacterial content in chilled turkey

2021 ◽  
Vol 640 (3) ◽  
pp. 032006
Author(s):  
U A Bliznyuk ◽  
P Yu Borchegovskaya ◽  
A P Chernyaev ◽  
V S Ipatova ◽  
V A Leontiev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dose Rate ◽  
Electron Beam Irradiation ◽  
Rate Effect ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Bacterial Content ◽  
Dose Rate Effect

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

2002 ◽  
Vol 744 ◽  
Author(s):  
O. Gelhausen ◽  
M. R. Phillips ◽  
H. N. Klein ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Hydrogen Atoms ◽  
Acceptor Pair ◽  
Low Energy Electron ◽  
The Impact ◽  
Mg Doped

ABSTRACTCL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H)0 complexes, LEEBI significantly increases the (e,Mg0) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.

Surface condition change of ceramics materials using of low energy electron beam irradiation

2002 ◽  
Vol 2002.2 (0) ◽  
pp. 467-468
Author(s):  
Kazuya OGURI ◽  
Naoki YAMAGUCHI ◽  
Kohsuke TAKAHASHI ◽  
Akira TONEGAWA ◽  
Yoshitake NISHI
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Surface Condition ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Condition Change ◽  
Low Energy Electron
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